Responsivity, Rise Time for Bi2O3 /Si Photo Detector
In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2014-01-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_102291_45216707850b5ecdaa45911c792d8791.pdf |
| _version_ | 1797325693879582720 |
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| author | Evan Tariq Al Waisy Marwa S. Al Wazny |
| author_facet | Evan Tariq Al Waisy Marwa S. Al Wazny |
| author_sort | Evan Tariq Al Waisy |
| collection | DOAJ |
| description | In the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise time in order to investigated the performance of the fabricated devise |
| first_indexed | 2024-03-08T06:13:06Z |
| format | Article |
| id | doaj.art-1669095a2de843afbd0dc3b6597adb35 |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:13:06Z |
| publishDate | 2014-01-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-1669095a2de843afbd0dc3b6597adb352024-02-04T17:29:52ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582014-01-01321B333810.30684/etj.32.1B.5102291Responsivity, Rise Time for Bi2O3 /Si Photo DetectorEvan Tariq Al WaisyMarwa S. Al WaznyIn the present work, three different active layer thicknesses of Bi2O3 filmswas employ for fabricated n-Bi2O3/p-Si heterojunction detector, using reactive pulse laser deposition technique as preparation method, detector parameter was carried out,responsivity, detectivity quantum efficiency and rise time in order to investigated the performance of the fabricated devisehttps://etj.uotechnology.edu.iq/article_102291_45216707850b5ecdaa45911c792d8791.pdfreactive pulse laser depositionbismuth oxideheterojunctionresponsivityrise timeactive layer thicknesses |
| spellingShingle | Evan Tariq Al Waisy Marwa S. Al Wazny Responsivity, Rise Time for Bi2O3 /Si Photo Detector Engineering and Technology Journal reactive pulse laser deposition bismuth oxide heterojunction responsivity rise time active layer thicknesses |
| title | Responsivity, Rise Time for Bi2O3 /Si Photo Detector |
| title_full | Responsivity, Rise Time for Bi2O3 /Si Photo Detector |
| title_fullStr | Responsivity, Rise Time for Bi2O3 /Si Photo Detector |
| title_full_unstemmed | Responsivity, Rise Time for Bi2O3 /Si Photo Detector |
| title_short | Responsivity, Rise Time for Bi2O3 /Si Photo Detector |
| title_sort | responsivity rise time for bi2o3 si photo detector |
| topic | reactive pulse laser deposition bismuth oxide heterojunction responsivity rise time active layer thicknesses |
| url | https://etj.uotechnology.edu.iq/article_102291_45216707850b5ecdaa45911c792d8791.pdf |
| work_keys_str_mv | AT evantariqalwaisy responsivityrisetimeforbi2o3siphotodetector AT marwasalwazny responsivityrisetimeforbi2o3siphotodetector |