Performance Enhancement of Deep Violet InGaN Double Quantum Wells Laser Diodes with Quaternary Superlattice Barriers Structure
The performance characteristics of InGaN Double-Quantum-Well (DQW) Laser Diodes (LDs) with different barrier structures were studied numerically by Integrated System Engineering Technical Computer-Aided Design (ISE TCAD) software. Three different kinds of structures of barriers including quaternary...
Main Authors: | Ghasem Alahyarizadeh, Maryam Amirhoseiny, Majid Khorsandi |
---|---|
Format: | Article |
Language: | English |
Published: |
Materials and Energy Research Center (MERC)
2022-01-01
|
Series: | Journal of Renewable Energy and Environment |
Subjects: | |
Online Access: | https://www.jree.ir/article_143144_e43ebf765488f0637e9b2e42586c0975.pdf |
Similar Items
-
Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier
by: Maryam Amirhoseiny, et al.
Published: (2021-05-01) -
Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
by: Xuan Li, et al.
Published: (2021-04-01) -
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
by: Liwen Cheng, et al.
Published: (2021-08-01) -
Bayesian Optimization of Hubbard U’s for Investigating InGaN Superlattices
by: Maxim N. Popov, et al.
Published: (2021-08-01) -
Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon
by: Jacob Ewing, et al.
Published: (2022-08-01)