SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits
This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given <in...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
|
| Series: | IEEE Open Journal of Circuits and Systems |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9896232/ |
| _version_ | 1811183507823656960 |
|---|---|
| author | Hung-Chi Han Antonio D'Amico Christian Enz |
| author_facet | Hung-Chi Han Antonio D'Amico Christian Enz |
| author_sort | Hung-Chi Han |
| collection | DOAJ |
| description | This paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> curves using the direct extraction and the multi-stage optimization process. It also handles the overfitting issue because of non-linear least squares. Moreover, this work demonstrates the SEKV-E as a universal tool by widely applying it to different silicon technologies, temperatures, dimensions, and back-gate voltages. |
| first_indexed | 2024-04-11T09:48:15Z |
| format | Article |
| id | doaj.art-16904d3e89844143a852305da5f51eb6 |
| institution | Directory Open Access Journal |
| issn | 2644-1225 |
| language | English |
| last_indexed | 2024-04-11T09:48:15Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Open Journal of Circuits and Systems |
| spelling | doaj.art-16904d3e89844143a852305da5f51eb62022-12-22T04:30:55ZengIEEEIEEE Open Journal of Circuits and Systems2644-12252022-01-01316216710.1109/OJCAS.2022.31790469896232SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog CircuitsHung-Chi Han0https://orcid.org/0000-0001-9900-5618Antonio D'Amico1https://orcid.org/0000-0001-5407-0256Christian Enz2https://orcid.org/0000-0002-9968-5278Integrated Circuits Laboratory, Éole Polytechnique Fédérale de Lausanne, Neuchâtel, SwitzerlandIntegrated Circuits Laboratory, Éole Polytechnique Fédérale de Lausanne, Neuchâtel, SwitzerlandIntegrated Circuits Laboratory, Éole Polytechnique Fédérale de Lausanne, Neuchâtel, SwitzerlandThis paper presents the open-source Python-based parameter extractor (SEKV-E) for the simplified EKV (sEKV) model, which enables the modern low-power circuit designs with the inversion coefficient design methodology. The tool extracts the essential sEKV parameters automatically from the given <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math></inline-formula> curves using the direct extraction and the multi-stage optimization process. It also handles the overfitting issue because of non-linear least squares. Moreover, this work demonstrates the SEKV-E as a universal tool by widely applying it to different silicon technologies, temperatures, dimensions, and back-gate voltages.https://ieeexplore.ieee.org/document/9896232/Bulk MOSFETcharge-based modelcryogenicFDSOIFinFETinversion coefficient |
| spellingShingle | Hung-Chi Han Antonio D'Amico Christian Enz SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits IEEE Open Journal of Circuits and Systems Bulk MOSFET charge-based model cryogenic FDSOI FinFET inversion coefficient |
| title | SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits |
| title_full | SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits |
| title_fullStr | SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits |
| title_full_unstemmed | SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits |
| title_short | SEKV-E: Parameter Extractor of Simplified EKV <italic>I</italic>-<italic>V</italic> Model for Low-Power Analog Circuits |
| title_sort | sekv e parameter extractor of simplified ekv italic i italic italic v italic model for low power analog circuits |
| topic | Bulk MOSFET charge-based model cryogenic FDSOI FinFET inversion coefficient |
| url | https://ieeexplore.ieee.org/document/9896232/ |
| work_keys_str_mv | AT hungchihan sekveparameterextractorofsimplifiedekvitaliciitalicitalicvitalicmodelforlowpoweranalogcircuits AT antoniodamico sekveparameterextractorofsimplifiedekvitaliciitalicitalicvitalicmodelforlowpoweranalogcircuits AT christianenz sekveparameterextractorofsimplifiedekvitaliciitalicitalicvitalicmodelforlowpoweranalogcircuits |