Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs
We proposed a method to effectively fabricate negatively charged nitrogen vacancy (NV ^− ) centers close to the diamond surface by applying femtosecond laser writing technique. With a thick layer of silicon (Si) nanoballs coated, diamond surface was irradiated by high-fluence femtosecond laser pulse...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/ab6351 |
| _version_ | 1797750327673356288 |
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| author | Youying Rong Zhiping Ju Qiang Ma Shikang Liu Chengda Pan Botao Wu Si Shen E Wu |
| author_facet | Youying Rong Zhiping Ju Qiang Ma Shikang Liu Chengda Pan Botao Wu Si Shen E Wu |
| author_sort | Youying Rong |
| collection | DOAJ |
| description | We proposed a method to effectively fabricate negatively charged nitrogen vacancy (NV ^− ) centers close to the diamond surface by applying femtosecond laser writing technique. With a thick layer of silicon (Si) nanoballs coated, diamond surface was irradiated by high-fluence femtosecond laser pulses. A large number of NV ^− centers were created around the laser ablation crater area without thermal annealing. The distribution of the NV ^− centers was expanded to about 50 μ m away from the crater center. To demonstrate the function of Si nanoballs, we performed the exactly same laser illumination process on the bare region of the sample surface. In this case, only a few NV ^− centers were generated around ablation crater. At distance of 32 μ m away from crater centers, the NV ^− density for the case with nanoballs was up to 15.5 times higher compared to the case without nanoballs. Furthermore, we also investigated the influence of laser fluence and pulse number on the NV ^− density for the case with Si-nanoball layer. Finally, the formation mechanism of NV ^− centers and the role of Si nanoballs were explained via Coulomb explosion model. The method is demonstrated to be a promising approach to efficiently and rapidly fabricate NV ^− centers close to the surface of the diamond, which are significant in quantum sensing. Furthermore, the results provide deep insights into complex light-matter interactions. |
| first_indexed | 2024-03-12T16:32:08Z |
| format | Article |
| id | doaj.art-169d19d70f684a78a30a3c5416148a7c |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:32:08Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-169d19d70f684a78a30a3c5416148a7c2023-08-08T15:26:51ZengIOP PublishingNew Journal of Physics1367-26302020-01-0122101300610.1088/1367-2630/ab6351Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballsYouying Rong0Zhiping Ju1Qiang Ma2Shikang Liu3Chengda Pan4Botao Wu5Si Shen6E Wu7State Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of ChinaState Key Laboratory of Precision Spectroscopy, East China Normal University , Shanghai 200062, People’s Republic of China; Collaborative Innovation Center of Extreme Optics, Shanxi University , Taiyuan, Shanxi 030006, People’s Republic of China; Joint Institute of Advanced Science and Technology, East China Normal University , Shanghai 200062, People’s Republic of ChinaWe proposed a method to effectively fabricate negatively charged nitrogen vacancy (NV ^− ) centers close to the diamond surface by applying femtosecond laser writing technique. With a thick layer of silicon (Si) nanoballs coated, diamond surface was irradiated by high-fluence femtosecond laser pulses. A large number of NV ^− centers were created around the laser ablation crater area without thermal annealing. The distribution of the NV ^− centers was expanded to about 50 μ m away from the crater center. To demonstrate the function of Si nanoballs, we performed the exactly same laser illumination process on the bare region of the sample surface. In this case, only a few NV ^− centers were generated around ablation crater. At distance of 32 μ m away from crater centers, the NV ^− density for the case with nanoballs was up to 15.5 times higher compared to the case without nanoballs. Furthermore, we also investigated the influence of laser fluence and pulse number on the NV ^− density for the case with Si-nanoball layer. Finally, the formation mechanism of NV ^− centers and the role of Si nanoballs were explained via Coulomb explosion model. The method is demonstrated to be a promising approach to efficiently and rapidly fabricate NV ^− centers close to the surface of the diamond, which are significant in quantum sensing. Furthermore, the results provide deep insights into complex light-matter interactions.https://doi.org/10.1088/1367-2630/ab6351nitrogen vacancy centers in diamondfemtosecond laser techniquesilicon nanoballssingle emitters |
| spellingShingle | Youying Rong Zhiping Ju Qiang Ma Shikang Liu Chengda Pan Botao Wu Si Shen E Wu Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs New Journal of Physics nitrogen vacancy centers in diamond femtosecond laser technique silicon nanoballs single emitters |
| title | Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| title_full | Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| title_fullStr | Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| title_full_unstemmed | Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| title_short | Efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| title_sort | efficient generation of nitrogen vacancy centers by laser writing close to the diamond surface with a layer of silicon nanoballs |
| topic | nitrogen vacancy centers in diamond femtosecond laser technique silicon nanoballs single emitters |
| url | https://doi.org/10.1088/1367-2630/ab6351 |
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