Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure
The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the salicide poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS pr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10044965/ |
| _version_ | 1797833174895558656 |
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| author | Yaozu Guo Haolan Ma Ke Wang Li Zhang Feng Yan Ping Han Xiaoli Ji |
| author_facet | Yaozu Guo Haolan Ma Ke Wang Li Zhang Feng Yan Ping Han Xiaoli Ji |
| author_sort | Yaozu Guo |
| collection | DOAJ |
| description | The resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the salicide poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS process. The simulation results show that not only are surface plasmon polaritons generated at the interface of the Al grating and SiO<sub>2</sub>, Al grating also provides the infrared resonant cavity required for the absorber, which improves the responsivity of the microbolometer. According to the experimental results, the maximum detectivity of the microbolometer with the grating structure reaches up to 2.26 × 10<sup>9</sup> cmHz<sup>1/2</sup>/W at 10 μm, which means an increase by 27.8% compared to the one without the Al grating. Moreover, the average detectivity of the microbolometer is also improved when the wavelength ranges from 7 μm to 13 μm. It is effortless to implement the proposed high-performance microbolometer in a unit structure based on CMOS technology, which is favorable to high-density array integration. |
| first_indexed | 2024-04-09T14:20:17Z |
| format | Article |
| id | doaj.art-16c82d859ed04bd382a74a57439fd5e7 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-04-09T14:20:17Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-16c82d859ed04bd382a74a57439fd5e72023-05-04T23:00:03ZengIEEEIEEE Photonics Journal1943-06552023-01-011531710.1109/JPHOT.2023.324463410044965Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating StructureYaozu Guo0https://orcid.org/0000-0003-0231-1649Haolan Ma1Ke Wang2Li Zhang3https://orcid.org/0000-0002-6762-9108Feng Yan4Ping Han5Xiaoli Ji6https://orcid.org/0000-0002-5689-1215College of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaCollege of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangshu, ChinaThe resistive microbolometer fabricated by using CMOS technology can be monolithically integrated with the readout circuit but usually performs poorly in responsivity and detectivity. In this paper, the salicide poly-Si microbolometer with Al grating structure is demonstrated in the standard CMOS process. The simulation results show that not only are surface plasmon polaritons generated at the interface of the Al grating and SiO<sub>2</sub>, Al grating also provides the infrared resonant cavity required for the absorber, which improves the responsivity of the microbolometer. According to the experimental results, the maximum detectivity of the microbolometer with the grating structure reaches up to 2.26 × 10<sup>9</sup> cmHz<sup>1/2</sup>/W at 10 μm, which means an increase by 27.8% compared to the one without the Al grating. Moreover, the average detectivity of the microbolometer is also improved when the wavelength ranges from 7 μm to 13 μm. It is effortless to implement the proposed high-performance microbolometer in a unit structure based on CMOS technology, which is favorable to high-density array integration.https://ieeexplore.ieee.org/document/10044965/Al gratingCMOS processmicrobolometerresonant cavitysalicide poly-Si thermistors |
| spellingShingle | Yaozu Guo Haolan Ma Ke Wang Li Zhang Feng Yan Ping Han Xiaoli Ji Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure IEEE Photonics Journal Al grating CMOS process microbolometer resonant cavity salicide poly-Si thermistors |
| title | Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure |
| title_full | Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure |
| title_fullStr | Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure |
| title_full_unstemmed | Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure |
| title_short | Performance-Enhanced Polysilicon Microbolometer in CMOS Technology With a Grating Structure |
| title_sort | performance enhanced polysilicon microbolometer in cmos technology with a grating structure |
| topic | Al grating CMOS process microbolometer resonant cavity salicide poly-Si thermistors |
| url | https://ieeexplore.ieee.org/document/10044965/ |
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