Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packagin...

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Main Authors: Ye Jin Jang, Ashutosh Sharma, Jae Pil Jung
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Materials
Subjects:
Online Access:https://www.mdpi.com/1996-1944/16/24/7652
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author Ye Jin Jang
Ashutosh Sharma
Jae Pil Jung
author_facet Ye Jin Jang
Ashutosh Sharma
Jae Pil Jung
author_sort Ye Jin Jang
collection DOAJ
description Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.
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spelling doaj.art-16fedb328f914d79a225437eed74cdca2023-12-22T14:22:57ZengMDPI AGMaterials1996-19442023-12-011624765210.3390/ma16247652Advanced 3D Through-Si-Via and Solder Bumping Technology: A ReviewYe Jin Jang0Ashutosh Sharma1Jae Pil Jung2Department of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of KoreaDepartment of Materials Science and Engineering, Ajou University, 206-Worldcup-ro, Yeongtong-gu, Gyeonggi-do, Suwon 16499, Republic of KoreaDepartment of Materials Science and Engineering, University of Seoul, Seoul 02504, Republic of KoreaThree-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for achieving high-density integration, high-speed connectivity, and for downsizing of electronic devices. This paper describes recent developments in TSV fabrication and bonding methods in advanced 3D electronic packaging. In particular, the authors have overviewed the recent progress in the fabrication of TSV, various etching and functional layers, and conductive filling of TSVs, as well as bonding materials such as low-temperature nano-modified solders, transient liquid phase (TLP) bonding, Cu pillars, composite hybrids, and bump-free bonding, as well as the role of emerging high entropy alloy (HEA) solders in 3D microelectronic packaging. This paper serves as a guideline enumerating the current developments in 3D packaging that allow Si semiconductors to deliver improved performance and power efficiency.https://www.mdpi.com/1996-1944/16/24/7652three-dimensional packagingthrough-Si-viaCu pillar bondinghybrid composite bondinghigh entropy alloys
spellingShingle Ye Jin Jang
Ashutosh Sharma
Jae Pil Jung
Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
Materials
three-dimensional packaging
through-Si-via
Cu pillar bonding
hybrid composite bonding
high entropy alloys
title Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
title_full Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
title_fullStr Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
title_full_unstemmed Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
title_short Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
title_sort advanced 3d through si via and solder bumping technology a review
topic three-dimensional packaging
through-Si-via
Cu pillar bonding
hybrid composite bonding
high entropy alloys
url https://www.mdpi.com/1996-1944/16/24/7652
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