Sulfur Vacancies Enriched 2D ZnIn<sub>2</sub>S<sub>4</sub> Nanosheets for Improving Photoelectrochemical Performance
Vacancies engineering based on semiconductors is an effective method to enhance photoelectrochemical activity. Herein, we used a facile one-step solvothermal method to prepare sulfur vacancies modified ultrathin two-dimensional (2D) ZnIn<sub>2</sub>S<sub>4</sub> nanosheets. T...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
|
| Series: | Catalysts |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4344/12/4/400 |
| Summary: | Vacancies engineering based on semiconductors is an effective method to enhance photoelectrochemical activity. Herein, we used a facile one-step solvothermal method to prepare sulfur vacancies modified ultrathin two-dimensional (2D) ZnIn<sub>2</sub>S<sub>4</sub> nanosheets. The photon-to-current efficiency of sulfur vacancies modified ultrathin 2D ZnIn<sub>2</sub>S<sub>4</sub> nanosheets is 1.82-fold than ZnIn<sub>2</sub>S<sub>4</sub> nanosheets without sulfur vacancies and 2.04-fold than multilayer ZnIn<sub>2</sub>S<sub>4</sub>. The better performances can be attributed to the introduced sulfur vacancies in ZnIn<sub>2</sub>S<sub>4</sub>, which influence the electronic structure of ZnIn<sub>2</sub>S<sub>4</sub> to absorb more visible light and act as the electrons trapping sites to suppress the recombination of photo-generated carriers. These results provide a new route to designing efficient photocatalyst by introducing sulfur vacancies. |
|---|---|
| ISSN: | 2073-4344 |