Cu<sub>2</sub>ZnSnS<sub>4</sub>/Bi<sub>2</sub>FeCrO<sub>6</sub> semiconductor heterojunction grown by pulsed laser deposition and its optoelectronic properties
Inorganic Bi-based double perovskite oxide, Bi<sub>2</sub>FeCrO<sub>6</sub> (BFCO), has offered new opportunities for applications in burgeoning fields of optoelectronic and photovoltaic, due to its unique multiferroic properties at room temperature. The P-type direct-bandgap...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Journal of Materials Engineering
2021-07-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.001092 |
| Summary: | Inorganic Bi-based double perovskite oxide, Bi<sub>2</sub>FeCrO<sub>6</sub> (BFCO), has offered new opportunities for applications in burgeoning fields of optoelectronic and photovoltaic, due to its unique multiferroic properties at room temperature. The P-type direct-bandgap semiconductor Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) was adopted to couple with BFCO as hole transport layer, in order to construct BFCO/CZTS heterostructure. Pulsed laser deposition (PLD) technique was used to deposit above-mentioned polynary compound films on different substrates (<i>i.e.</i> FTO conductive glass, Nb-doped SrTiO<sub>3</sub> and Si/SiO<sub>2</sub>/Ti/Pt). For the preparation of heterojunctions, the interfacial defects and impurities could be effectively restrained by <i>in-situ</i> layer-by-layer deposition technique. The systematical analysis according to SEM, AFM, EDS and XRD measurements verified that the morphology of the achieved stoichiometric films was basically uniform and dense. The impacts of deposition temperature on the product performance were emphatically investigated. The bandgap of obtained BFCO and CZTS films (<i>i.e</i>. 2.23 eV and 1.49 eV, respectively) was estimated by using Tauc method based on visible absorption spectroscopy measurements. The results show that BFCO/CZTS heterojunction has a favorable rectifying characteristic; the leakage current mechanism is consistent with Schottky emission model when the electric field intensity spans from 0.5 kV/cm to 2.0 kV/cm. |
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| ISSN: | 1001-4381 1001-4381 |