Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array
We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm ^−1 are obtained by field enhancement in the near field of a resonant metallic a...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2015-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/17/4/043002 |
| _version_ | 1797751077153538048 |
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| author | Abebe T Tarekegne Krzysztof Iwaszczuk Maksim Zalkovskij Andrew C Strikwerda Peter U Jepsen |
| author_facet | Abebe T Tarekegne Krzysztof Iwaszczuk Maksim Zalkovskij Andrew C Strikwerda Peter U Jepsen |
| author_sort | Abebe T Tarekegne |
| collection | DOAJ |
| description | We report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm ^−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes. |
| first_indexed | 2024-03-12T16:43:11Z |
| format | Article |
| id | doaj.art-17325f7e84b84a3f9312e7da4defaa64 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:43:11Z |
| publishDate | 2015-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-17325f7e84b84a3f9312e7da4defaa642023-08-08T14:21:11ZengIOP PublishingNew Journal of Physics1367-26302015-01-0117404300210.1088/1367-2630/17/4/043002Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna arrayAbebe T Tarekegne0Krzysztof Iwaszczuk1Maksim Zalkovskij2Andrew C Strikwerda3Peter U Jepsen4Department of Photonics Engineering, Technical University of Denmark , Ørsteds Plads, Building 344, DK-2800 Kgs. Lyngby, DenmarkDepartment of Photonics Engineering, Technical University of Denmark , Ørsteds Plads, Building 344, DK-2800 Kgs. Lyngby, DenmarkDepartment of Photonics Engineering, Technical University of Denmark , Ørsteds Plads, Building 344, DK-2800 Kgs. Lyngby, DenmarkDepartment of Photonics Engineering, Technical University of Denmark , Ørsteds Plads, Building 344, DK-2800 Kgs. Lyngby, DenmarkDepartment of Photonics Engineering, Technical University of Denmark , Ørsteds Plads, Building 344, DK-2800 Kgs. Lyngby, DenmarkWe report on the observation of ultrafast impact ionization and carrier generation in high resistivity silicon induced by intense subpicosecond terahertz transients. Local terahertz peak electric fields of several MV cm ^−1 are obtained by field enhancement in the near field of a resonant metallic antenna array. The carrier multiplication is probed by the frequency shift of the resonance of the antenna array due to the change of the local refractive index of the substrate. Experimental results and simulations show that the carrier density in silicon increases by over seven orders of magnitude in the presence of an intense terahertz field. The enhancement of the resonance shift for illumination from the substrate side in comparison to illumination from the antenna side is consistent with our prediction that the back illumination is highly beneficial for a wide range of nonlinear processes.https://doi.org/10.1088/1367-2630/17/4/043002impact ionizationTHz filedantenna arraysilicon |
| spellingShingle | Abebe T Tarekegne Krzysztof Iwaszczuk Maksim Zalkovskij Andrew C Strikwerda Peter U Jepsen Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array New Journal of Physics impact ionization THz filed antenna array silicon |
| title | Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| title_full | Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| title_fullStr | Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| title_full_unstemmed | Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| title_short | Impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| title_sort | impact ionization in high resistivity silicon induced by an intense terahertz field enhanced by an antenna array |
| topic | impact ionization THz filed antenna array silicon |
| url | https://doi.org/10.1088/1367-2630/17/4/043002 |
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