Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots
We have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO<sub>2</sub> with control of high–selective chemical–vapor deposition and applied them to an active layer of light–emitting diodes (LEDs). Through luminescence measurements, we...
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| Format: | Article |
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MDPI AG
2023-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/9/1475 |
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| author | Katsunori Makihara Yuji Yamamoto Yuki Imai Noriyuki Taoka Markus Andreas Schubert Bernd Tillack Seiichi Miyazaki |
| author_facet | Katsunori Makihara Yuji Yamamoto Yuki Imai Noriyuki Taoka Markus Andreas Schubert Bernd Tillack Seiichi Miyazaki |
| author_sort | Katsunori Makihara |
| collection | DOAJ |
| description | We have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO<sub>2</sub> with control of high–selective chemical–vapor deposition and applied them to an active layer of light–emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge–core, reflecting the type II energy band discontinuity between the Si–clad and Ge–core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near–infrared region and is attributed to radiative recombination between quantized states in the Ge–core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si–based light–emitting devices that are highly compatible with Si–ultra–large–scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics. |
| first_indexed | 2024-03-11T04:10:43Z |
| format | Article |
| id | doaj.art-173deb18e5534768aa9276dd2497a6a0 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T04:10:43Z |
| publishDate | 2023-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-173deb18e5534768aa9276dd2497a6a02023-11-17T23:26:35ZengMDPI AGNanomaterials2079-49912023-04-01139147510.3390/nano13091475Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum DotsKatsunori Makihara0Yuji Yamamoto1Yuki Imai2Noriyuki Taoka3Markus Andreas Schubert4Bernd Tillack5Seiichi Miyazaki6Graduate School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya 464-8603, JapanIHP–Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, GermanyGraduate School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya 464-8603, JapanGraduate School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya 464-8603, JapanIHP–Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, GermanyIHP–Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt, GermanyGraduate School of Engineering, Nagoya University, Furo–cho, Chikusa–ku, Nagoya 464-8603, JapanWe have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO<sub>2</sub> with control of high–selective chemical–vapor deposition and applied them to an active layer of light–emitting diodes (LEDs). Through luminescence measurements, we have reported characteristics carrier confinement and recombination properties in the Ge–core, reflecting the type II energy band discontinuity between the Si–clad and Ge–core. Additionally, under forward bias conditions over a threshold bias for LEDs, electroluminescence becomes observable at room temperature in the near–infrared region and is attributed to radiative recombination between quantized states in the Ge–core with a deep potential well for holes caused by electron/hole simultaneous injection from the gate and substrate, respectively. The results will lead to the development of Si–based light–emitting devices that are highly compatible with Si–ultra–large–scale integration processing, which has been believed to have extreme difficulty in realizing silicon photonics.https://www.mdpi.com/2079-4991/13/9/1475Si quantum dotscore/shell structureCVD |
| spellingShingle | Katsunori Makihara Yuji Yamamoto Yuki Imai Noriyuki Taoka Markus Andreas Schubert Bernd Tillack Seiichi Miyazaki Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots Nanomaterials Si quantum dots core/shell structure CVD |
| title | Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots |
| title_full | Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots |
| title_fullStr | Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots |
| title_full_unstemmed | Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots |
| title_short | Room Temperature Light Emission from Superatom-like Ge–Core/Si–Shell Quantum Dots |
| title_sort | room temperature light emission from superatom like ge core si shell quantum dots |
| topic | Si quantum dots core/shell structure CVD |
| url | https://www.mdpi.com/2079-4991/13/9/1475 |
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