Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching.
With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral na...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Public Library of Science (PLoS)
2022-01-01
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| Series: | PLoS ONE |
| Online Access: | https://doi.org/10.1371/journal.pone.0264846 |
| _version_ | 1828283821223575552 |
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| author | Maik-Ivo Terasa Pia Holtz Niko Carstens Sören Kaps Franz Faupel Alexander Vahl Rainer Adelung |
| author_facet | Maik-Ivo Terasa Pia Holtz Niko Carstens Sören Kaps Franz Faupel Alexander Vahl Rainer Adelung |
| author_sort | Maik-Ivo Terasa |
| collection | DOAJ |
| description | With this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching. The resistance state resets to a high resistive state (HRS) either if the voltage is removed with a retention time in the second- to sub-minute scale (diffusive) or by applying a reverse voltage (bipolar). Furthermore, the retention time is positively correlated to the duration of the Set voltage pulse. The potential for low-voltage operation makes this approach a promising candidate for short-term memory applications in neuromorphic circuits. In addition, the lateral fabrication approach opens the pathway towards integrating sensor-functionality and offers a general starting point for the scalable fabrication of nanoscaled devices. |
| first_indexed | 2024-04-13T08:50:40Z |
| format | Article |
| id | doaj.art-17487ee6fa3d4c4b89f1b6e79ac45761 |
| institution | Directory Open Access Journal |
| issn | 1932-6203 |
| language | English |
| last_indexed | 2024-04-13T08:50:40Z |
| publishDate | 2022-01-01 |
| publisher | Public Library of Science (PLoS) |
| record_format | Article |
| series | PLoS ONE |
| spelling | doaj.art-17487ee6fa3d4c4b89f1b6e79ac457612022-12-22T02:53:28ZengPublic Library of Science (PLoS)PLoS ONE1932-62032022-01-01173e026484610.1371/journal.pone.0264846Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching.Maik-Ivo TerasaPia HoltzNiko CarstensSören KapsFranz FaupelAlexander VahlRainer AdelungWith this work we introduce a novel memristor in a lateral geometry whose resistive switching behaviour unifies the capabilities of bipolar switching with decelerated diffusive switching showing a biologically plausible short-term memory. A new fabrication route is presented for achieving lateral nano-scaled distances by depositing a sparse network of carbon nanotubes (CNTs) via spin-coating of a custom-made CNT dispersion. Electrochemical metallization-type (ECM) resistive switching is obtained by implanting AgAu nanoparticles with a Haberland-type gas aggregation cluster source into the nanogaps between the CNTs and shows a hybrid behaviour of both diffusive and bipolar switching. The resistance state resets to a high resistive state (HRS) either if the voltage is removed with a retention time in the second- to sub-minute scale (diffusive) or by applying a reverse voltage (bipolar). Furthermore, the retention time is positively correlated to the duration of the Set voltage pulse. The potential for low-voltage operation makes this approach a promising candidate for short-term memory applications in neuromorphic circuits. In addition, the lateral fabrication approach opens the pathway towards integrating sensor-functionality and offers a general starting point for the scalable fabrication of nanoscaled devices.https://doi.org/10.1371/journal.pone.0264846 |
| spellingShingle | Maik-Ivo Terasa Pia Holtz Niko Carstens Sören Kaps Franz Faupel Alexander Vahl Rainer Adelung Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. PLoS ONE |
| title | Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. |
| title_full | Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. |
| title_fullStr | Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. |
| title_full_unstemmed | Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. |
| title_short | Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between diffusive and bipolar switching. |
| title_sort | sparse cnt networks with implanted agau nanoparticles a novel memristor with short term memory bordering between diffusive and bipolar switching |
| url | https://doi.org/10.1371/journal.pone.0264846 |
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