Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2008-06-01
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| Series: | Open Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.2478/s11534-008-0013-5 |
| _version_ | 1829509129876537344 |
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| author | Zhang Limin Zhang Xiaodong You Wei Yang Zhen Wang WenXiu Ge Qing Liu Zhengmin |
| author_facet | Zhang Limin Zhang Xiaodong You Wei Yang Zhen Wang WenXiu Ge Qing Liu Zhengmin |
| author_sort | Zhang Limin |
| collection | DOAJ |
| first_indexed | 2024-12-16T11:40:58Z |
| format | Article |
| id | doaj.art-1752d07b7b7341998440c34179fc1d85 |
| institution | Directory Open Access Journal |
| issn | 2391-5471 |
| language | English |
| last_indexed | 2024-12-16T11:40:58Z |
| publishDate | 2008-06-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Open Physics |
| spelling | doaj.art-1752d07b7b7341998440c34179fc1d852022-12-21T22:32:57ZengDe GruyterOpen Physics2391-54712008-06-016228328810.2478/s11534-008-0013-5Effects of ion implantation on yellow luminescence in unintentional doped n-type GaNZhang Limin0Zhang Xiaodong1You Wei2Yang Zhen3Wang WenXiu4Ge Qing5Liu Zhengmin6School of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, ChinaSchool of Nuclear Science and Technology, Lanzhou university, Lanzhou, 730000, Chinahttps://doi.org/10.2478/s11534-008-0013-578.66.fd78.55.-m85.40.ry68.55.lngallium nitride (gan)photoluminescence spectraion implantation |
| spellingShingle | Zhang Limin Zhang Xiaodong You Wei Yang Zhen Wang WenXiu Ge Qing Liu Zhengmin Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN Open Physics 78.66.fd 78.55.-m 85.40.ry 68.55.ln gallium nitride (gan) photoluminescence spectra ion implantation |
| title | Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN |
| title_full | Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN |
| title_fullStr | Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN |
| title_full_unstemmed | Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN |
| title_short | Effects of ion implantation on yellow luminescence in unintentional doped n-type GaN |
| title_sort | effects of ion implantation on yellow luminescence in unintentional doped n type gan |
| topic | 78.66.fd 78.55.-m 85.40.ry 68.55.ln gallium nitride (gan) photoluminescence spectra ion implantation |
| url | https://doi.org/10.2478/s11534-008-0013-5 |
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