An effective approach for identifying defective critical fabrication path

Most defect signatures on wafers are caused by faulty tools. If these defects are not captured by in-line inspection tools or sampled during Defect Review-SEM, they are carried over multiple processing steps and discovered at the end of the fabrication procedure. Wafers with different defect signatu...

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Main Author: Kamal Taha
Format: Article
Language:English
Published: Taylor & Francis Group 2019-01-01
Series:Cogent Engineering
Subjects:
Online Access:http://dx.doi.org/10.1080/23311916.2019.1575636
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author Kamal Taha
author_facet Kamal Taha
author_sort Kamal Taha
collection DOAJ
description Most defect signatures on wafers are caused by faulty tools. If these defects are not captured by in-line inspection tools or sampled during Defect Review-SEM, they are carried over multiple processing steps and discovered at the end of the fabrication procedure. Wafers with different defect signatures discovered at the end of the fabrication procedure are, most often, processed through same faulty tools. The fabrication paths of most defective wafers converge at some point to form a common sub-path before they disperse again. Usually, faulty tools in this common path cause most of the different defect signatures discovered at the end of the fabrication procedure. Process engineers would need to trace in reverse the fabrication paths to identify this common path to repair its tools. We introduce in this paper a defect diagnostic system called IDFP that can identify the common fabrication path that caused most of the defectivities on wafers discovered at the end of the fabrication procedure. We evaluated the quality of IDFP by experimentally comparing it with two systems. Results revealed marked improvement.
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spelling doaj.art-176e00c33b154b96a003414024dba34e2023-09-02T16:06:04ZengTaylor & Francis GroupCogent Engineering2331-19162019-01-016110.1080/23311916.2019.15756361575636An effective approach for identifying defective critical fabrication pathKamal Taha0Khalifa UniversityMost defect signatures on wafers are caused by faulty tools. If these defects are not captured by in-line inspection tools or sampled during Defect Review-SEM, they are carried over multiple processing steps and discovered at the end of the fabrication procedure. Wafers with different defect signatures discovered at the end of the fabrication procedure are, most often, processed through same faulty tools. The fabrication paths of most defective wafers converge at some point to form a common sub-path before they disperse again. Usually, faulty tools in this common path cause most of the different defect signatures discovered at the end of the fabrication procedure. Process engineers would need to trace in reverse the fabrication paths to identify this common path to repair its tools. We introduce in this paper a defect diagnostic system called IDFP that can identify the common fabrication path that caused most of the defectivities on wafers discovered at the end of the fabrication procedure. We evaluated the quality of IDFP by experimentally comparing it with two systems. Results revealed marked improvement.http://dx.doi.org/10.1080/23311916.2019.1575636wafer defectfaulty toolwafer fabricationsemiconductor processing step
spellingShingle Kamal Taha
An effective approach for identifying defective critical fabrication path
Cogent Engineering
wafer defect
faulty tool
wafer fabrication
semiconductor processing step
title An effective approach for identifying defective critical fabrication path
title_full An effective approach for identifying defective critical fabrication path
title_fullStr An effective approach for identifying defective critical fabrication path
title_full_unstemmed An effective approach for identifying defective critical fabrication path
title_short An effective approach for identifying defective critical fabrication path
title_sort effective approach for identifying defective critical fabrication path
topic wafer defect
faulty tool
wafer fabrication
semiconductor processing step
url http://dx.doi.org/10.1080/23311916.2019.1575636
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