Study on the effect of re-deposition induced by ion beam etching on MTJ performances

Magnetic tunnel junction (MTJ) as a key spintronics device can be used for the high-sensitivity magnetic field sensor and high-density non-volatile magnetic random access memory (MRAM). To obtain a high tunneling magnetoresistance (TMR), precise control of the etching process for MTJs is an essentia...

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Main Authors: MinHui Ji, Long Pan, Yueguo Hu, Mengchun Pan, Lan Yang, Junping Peng, Weicheng Qiu, Jiafei Hu, Qi Zhang, Peisen Li
Format: Article
Language:English
Published: AIP Publishing LLC 2019-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5117312
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author MinHui Ji
Long Pan
Yueguo Hu
Mengchun Pan
Lan Yang
Junping Peng
Weicheng Qiu
Jiafei Hu
Qi Zhang
Peisen Li
author_facet MinHui Ji
Long Pan
Yueguo Hu
Mengchun Pan
Lan Yang
Junping Peng
Weicheng Qiu
Jiafei Hu
Qi Zhang
Peisen Li
author_sort MinHui Ji
collection DOAJ
description Magnetic tunnel junction (MTJ) as a key spintronics device can be used for the high-sensitivity magnetic field sensor and high-density non-volatile magnetic random access memory (MRAM). To obtain a high tunneling magnetoresistance (TMR), precise control of the etching process for MTJs is an essential step. In order to investigate the effect of the etching angle on the performance of MTJ devices, a series of MTJ pillars are fabricated by etching with the incidence angle of 10°, 20° and 30°. The prepared samples are characterized by the optical microscopy and SEM, and the R-H curves are also measured and then statistically analyzed. The results reveal that the performance of the MTJ is strongly affected by the IBE process, displaying the uniformity of the pillars edge and MTJ performance will improve as well with the increase of the etching angle. Then, a simplified model based on the re-deposition effect of the etching process is established to explain the experimental phenomena. Furthermore, a newly defined material parameter is introduced in this model and obtained with fitting the experimental results. This proves a valuable way to evaluate the quality of the MTJ stack film without the interference of the device fabrication process.
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spelling doaj.art-178d1337f58b44f4a43c2ec7c14eda9f2022-12-21T19:54:56ZengAIP Publishing LLCAIP Advances2158-32262019-08-0198085317085317-610.1063/1.5117312092908ADVStudy on the effect of re-deposition induced by ion beam etching on MTJ performancesMinHui Ji0Long Pan1Yueguo Hu2Mengchun Pan3Lan Yang4Junping Peng5Weicheng Qiu6Jiafei Hu7Qi Zhang8Peisen Li9College of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaCollege of Intelligence Science and Technology, National University of Defense Technology, Changsha, Hunan 410073, ChinaMagnetic tunnel junction (MTJ) as a key spintronics device can be used for the high-sensitivity magnetic field sensor and high-density non-volatile magnetic random access memory (MRAM). To obtain a high tunneling magnetoresistance (TMR), precise control of the etching process for MTJs is an essential step. In order to investigate the effect of the etching angle on the performance of MTJ devices, a series of MTJ pillars are fabricated by etching with the incidence angle of 10°, 20° and 30°. The prepared samples are characterized by the optical microscopy and SEM, and the R-H curves are also measured and then statistically analyzed. The results reveal that the performance of the MTJ is strongly affected by the IBE process, displaying the uniformity of the pillars edge and MTJ performance will improve as well with the increase of the etching angle. Then, a simplified model based on the re-deposition effect of the etching process is established to explain the experimental phenomena. Furthermore, a newly defined material parameter is introduced in this model and obtained with fitting the experimental results. This proves a valuable way to evaluate the quality of the MTJ stack film without the interference of the device fabrication process.http://dx.doi.org/10.1063/1.5117312
spellingShingle MinHui Ji
Long Pan
Yueguo Hu
Mengchun Pan
Lan Yang
Junping Peng
Weicheng Qiu
Jiafei Hu
Qi Zhang
Peisen Li
Study on the effect of re-deposition induced by ion beam etching on MTJ performances
AIP Advances
title Study on the effect of re-deposition induced by ion beam etching on MTJ performances
title_full Study on the effect of re-deposition induced by ion beam etching on MTJ performances
title_fullStr Study on the effect of re-deposition induced by ion beam etching on MTJ performances
title_full_unstemmed Study on the effect of re-deposition induced by ion beam etching on MTJ performances
title_short Study on the effect of re-deposition induced by ion beam etching on MTJ performances
title_sort study on the effect of re deposition induced by ion beam etching on mtj performances
url http://dx.doi.org/10.1063/1.5117312
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