Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing
Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high den...
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MDPI AG
2023-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/12/1851 |
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| author | Li-Wen Wang Chih-Wei Huang Ke-Jing Lee Sheng-Yuan Chu Yeong-Her Wang |
| author_facet | Li-Wen Wang Chih-Wei Huang Ke-Jing Lee Sheng-Yuan Chu Yeong-Her Wang |
| author_sort | Li-Wen Wang |
| collection | DOAJ |
| description | Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied in the fields of optoelectronics, high-power resistive switching devices, and so on, due to its excellent transparent material properties and wide bandgap. In this study, we successfully demonstrate that Al/graphene oxide (GO)/Ga<sub>2</sub>O<sub>3</sub>/ITO RRAM has the potential to achieve two-bit storage. Compared to its single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 10<sup>3</sup>. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms. |
| first_indexed | 2024-03-11T02:04:58Z |
| format | Article |
| id | doaj.art-179b96a5ac4449668f9c8200b291717c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T02:04:58Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-179b96a5ac4449668f9c8200b291717c2023-11-18T11:53:46ZengMDPI AGNanomaterials2079-49912023-06-011312185110.3390/nano13121851Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic ComputingLi-Wen Wang0Chih-Wei Huang1Ke-Jing Lee2Sheng-Yuan Chu3Yeong-Her Wang4Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanDepartment of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanInstitute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, TaiwanRecently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high density requirement in the era of big data. Many research groups have demonstrated that RRAM possesses the potential for multi-level cells, which would overcome demands related to mass storage. Among numerous semiconductor materials, gallium oxide (a fourth-generation semiconductor material) is applied in the fields of optoelectronics, high-power resistive switching devices, and so on, due to its excellent transparent material properties and wide bandgap. In this study, we successfully demonstrate that Al/graphene oxide (GO)/Ga<sub>2</sub>O<sub>3</sub>/ITO RRAM has the potential to achieve two-bit storage. Compared to its single-layer counterpart, the bilayer structure has excellent electrical properties and stable reliability. The endurance characteristics could be enhanced above 100 switching cycles with an ON/OFF ratio of over 10<sup>3</sup>. Moreover, the filament models are also described in this thesis to clarify the transport mechanisms.https://www.mdpi.com/2079-4991/13/12/1851RRAMgallium oxidegraphene oxidebilayer structuremulti-level storage |
| spellingShingle | Li-Wen Wang Chih-Wei Huang Ke-Jing Lee Sheng-Yuan Chu Yeong-Her Wang Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing Nanomaterials RRAM gallium oxide graphene oxide bilayer structure multi-level storage |
| title | Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing |
| title_full | Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing |
| title_fullStr | Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing |
| title_full_unstemmed | Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing |
| title_short | Multi-Level Resistive Al/Ga<sub>2</sub>O<sub>3</sub>/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing |
| title_sort | multi level resistive al ga sub 2 sub o sub 3 sub ito switching devices with interlayers of graphene oxide for neuromorphic computing |
| topic | RRAM gallium oxide graphene oxide bilayer structure multi-level storage |
| url | https://www.mdpi.com/2079-4991/13/12/1851 |
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