High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering
In this work, a novel device concept for improving the efficiency and field operation of conventional InAs/GaAs quantum dot (QD) based intermediate band solar cell (IBSC) with the feature of current constraint (CC-QD-IBSC) was proposed and evaluated from both theoretical simulations and experimental...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-06-01
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| Series: | Next Materials |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2949822823000138 |
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| author | Tomah Sogabe Yasushi Shoji Naoya Miyashita Daniel J. Farrell Kodai Shiba Hwen-Fen Hong Yoshitaka Okada |
| author_facet | Tomah Sogabe Yasushi Shoji Naoya Miyashita Daniel J. Farrell Kodai Shiba Hwen-Fen Hong Yoshitaka Okada |
| author_sort | Tomah Sogabe |
| collection | DOAJ |
| description | In this work, a novel device concept for improving the efficiency and field operation of conventional InAs/GaAs quantum dot (QD) based intermediate band solar cell (IBSC) with the feature of current constraint (CC-QD-IBSC) was proposed and evaluated from both theoretical simulations and experimental demonstrations. The advantages of the proposed device concept including increasing efficiency, obtaining higher suitability for operation under concentrated photovoltaic (CPV) condition and more robust efficiency stability against intermediate band fluctuation were rigorously identified using the detailed balance theorem by comparing with conventional InAs/GaAs QD-IBSC. Furthermore, a hybrid molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) shuttle growth of the proposed CC-QD-IBSC were adopted in this work for better preserving QD induced intermediate band feature and overcoming practical growth difficulties. By introducing a InGaP top cell for constraining the current of InAs/GaAs QD-IBSC, the short circuit current density of CC-QD-IBSC decreased to 13.0mA/cm2 under 1 sun illumination, a near 50 % reduction compared to the conventional InAs/GaAs QD-IBSC. On the contrary, by well adjusting the regrowth interface between MBE and MOCVD, we managed to reach the highest conversion efficiency of 22.8 % measured at an UL certified laboratory under light concentration ratio of 93 suns for the proposed CC-QD-IBSC with well-functioning QD and IB feature. It is our belief that our results pave the road for developing techniques geared towards higher efficiency and more practical field applications. |
| first_indexed | 2024-04-24T17:25:33Z |
| format | Article |
| id | doaj.art-17ba6b60c37547e68827078f95196b25 |
| institution | Directory Open Access Journal |
| issn | 2949-8228 |
| language | English |
| last_indexed | 2024-04-24T17:25:33Z |
| publishDate | 2023-06-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Next Materials |
| spelling | doaj.art-17ba6b60c37547e68827078f95196b252024-03-28T06:41:04ZengElsevierNext Materials2949-82282023-06-0112100013High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineeringTomah Sogabe0Yasushi Shoji1Naoya Miyashita2Daniel J. Farrell3Kodai Shiba4Hwen-Fen Hong5Yoshitaka Okada6Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, Japan; i-Powered Energy System Research Center, The University of Electro-Communications, Tokyo, Japan; Engineering Department, The University of Electro-Communications (i-PERC), Tokyo, Japan; Corresponding author at: i-Powered Energy System Research Center, The University of Electro-Communications, Tokyo, JapanResearch Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, Japan; Global Zero Emission Research Center (GZR), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, JapanResearch Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, Japan; Engineering Department, The University of Electro-Communications (i-PERC), Tokyo, JapanResearch Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, JapanEngineering Department, The University of Electro-Communications (i-PERC), Tokyo, JapanInstitute of Nuclear Energy Research (INER), Atomic Energy Council, Executive Yuan, Taoyuan, TaiwanResearch Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, JapanIn this work, a novel device concept for improving the efficiency and field operation of conventional InAs/GaAs quantum dot (QD) based intermediate band solar cell (IBSC) with the feature of current constraint (CC-QD-IBSC) was proposed and evaluated from both theoretical simulations and experimental demonstrations. The advantages of the proposed device concept including increasing efficiency, obtaining higher suitability for operation under concentrated photovoltaic (CPV) condition and more robust efficiency stability against intermediate band fluctuation were rigorously identified using the detailed balance theorem by comparing with conventional InAs/GaAs QD-IBSC. Furthermore, a hybrid molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) shuttle growth of the proposed CC-QD-IBSC were adopted in this work for better preserving QD induced intermediate band feature and overcoming practical growth difficulties. By introducing a InGaP top cell for constraining the current of InAs/GaAs QD-IBSC, the short circuit current density of CC-QD-IBSC decreased to 13.0mA/cm2 under 1 sun illumination, a near 50 % reduction compared to the conventional InAs/GaAs QD-IBSC. On the contrary, by well adjusting the regrowth interface between MBE and MOCVD, we managed to reach the highest conversion efficiency of 22.8 % measured at an UL certified laboratory under light concentration ratio of 93 suns for the proposed CC-QD-IBSC with well-functioning QD and IB feature. It is our belief that our results pave the road for developing techniques geared towards higher efficiency and more practical field applications.http://www.sciencedirect.com/science/article/pii/S2949822823000138Intermediate band solar cellInAs/GaAs quantum dotCPV |
| spellingShingle | Tomah Sogabe Yasushi Shoji Naoya Miyashita Daniel J. Farrell Kodai Shiba Hwen-Fen Hong Yoshitaka Okada High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering Next Materials Intermediate band solar cell InAs/GaAs quantum dot CPV |
| title | High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering |
| title_full | High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering |
| title_fullStr | High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering |
| title_full_unstemmed | High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering |
| title_short | High-efficiency InAs/GaAs quantum dot intermediate band solar cell achieved through current constraint engineering |
| title_sort | high efficiency inas gaas quantum dot intermediate band solar cell achieved through current constraint engineering |
| topic | Intermediate band solar cell InAs/GaAs quantum dot CPV |
| url | http://www.sciencedirect.com/science/article/pii/S2949822823000138 |
| work_keys_str_mv | AT tomahsogabe highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT yasushishoji highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT naoyamiyashita highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT danieljfarrell highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT kodaishiba highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT hwenfenhong highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering AT yoshitakaokada highefficiencyinasgaasquantumdotintermediatebandsolarcellachievedthroughcurrentconstraintengineering |