Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films
Ba0.90Gd0.10TiO3 (BGT) thin films have been fabricated in MFM configuration via sol-gel technique at the different annealing temperature. The dielectric parameters of the films are measured using Impedance Analyzer as a function of frequency. It is found that, at frequency 1 kHz, the measured value...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Kaunas University of Technology
2022-11-01
|
| Series: | Medžiagotyra |
| Subjects: | |
| Online Access: | https://matsc.ktu.lt/index.php/MatSc/article/view/32220 |
| _version_ | 1811232831124275200 |
|---|---|
| author | Ala'eddin Ahmad SAIF Yen Chin TEH Prabakaran POOPALAN |
| author_facet | Ala'eddin Ahmad SAIF Yen Chin TEH Prabakaran POOPALAN |
| author_sort | Ala'eddin Ahmad SAIF |
| collection | DOAJ |
| description | Ba0.90Gd0.10TiO3 (BGT) thin films have been fabricated in MFM configuration via sol-gel technique at the different annealing temperature. The dielectric parameters of the films are measured using Impedance Analyzer as a function of frequency. It is found that, at frequency 1 kHz, the measured value of e increases from 57 to 264 as the annealing temperature increases from 600 °C to 900 °C, which is correlated to the improved crystallinity and grain size increment. The ferroelectric hysteresis of the films is analyzed using Sawyer-Tower circuit that shows an enhancement for the ferroelectric properties with annealing temperature, which is also confirmed using C-V characteristics. The leakage current of the films is evaluated via Semiconductor Parameter Analyzer (SPA), which shows that at a certain electric field, the leakage current density increases as the annealing temperature increases, that is attributed to the crystallinity and grain size improvement. The conduction mechanism of the films is deeply investigated through different models to find out that the space charge limited conduction (SCLC) mechanism is the controlling conduction process. |
| first_indexed | 2024-04-12T11:09:52Z |
| format | Article |
| id | doaj.art-17dcbefee830427c9fa9cc914170771c |
| institution | Directory Open Access Journal |
| issn | 1392-1320 2029-7289 |
| language | English |
| last_indexed | 2024-04-12T11:09:52Z |
| publishDate | 2022-11-01 |
| publisher | Kaunas University of Technology |
| record_format | Article |
| series | Medžiagotyra |
| spelling | doaj.art-17dcbefee830427c9fa9cc914170771c2022-12-22T03:35:38ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892022-11-0110.5755/j02.ms.3222037474Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin FilmsAla'eddin Ahmad SAIF0https://orcid.org/0000-0002-2962-2810Yen Chin TEH1https://orcid.org/0000-0002-6888-3300Prabakaran POOPALAN2https://orcid.org/0000-0003-1698-0632University of JeddahInfineon Technologies (Kulim) Sdn Bhd.Universiti Malaysia PerlisBa0.90Gd0.10TiO3 (BGT) thin films have been fabricated in MFM configuration via sol-gel technique at the different annealing temperature. The dielectric parameters of the films are measured using Impedance Analyzer as a function of frequency. It is found that, at frequency 1 kHz, the measured value of e increases from 57 to 264 as the annealing temperature increases from 600 °C to 900 °C, which is correlated to the improved crystallinity and grain size increment. The ferroelectric hysteresis of the films is analyzed using Sawyer-Tower circuit that shows an enhancement for the ferroelectric properties with annealing temperature, which is also confirmed using C-V characteristics. The leakage current of the films is evaluated via Semiconductor Parameter Analyzer (SPA), which shows that at a certain electric field, the leakage current density increases as the annealing temperature increases, that is attributed to the crystallinity and grain size improvement. The conduction mechanism of the films is deeply investigated through different models to find out that the space charge limited conduction (SCLC) mechanism is the controlling conduction process.https://matsc.ktu.lt/index.php/MatSc/article/view/32220annealing temperatureba0.90gd0.10tio3conduction mechanismdielectricferroelectric |
| spellingShingle | Ala'eddin Ahmad SAIF Yen Chin TEH Prabakaran POOPALAN Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films Medžiagotyra annealing temperature ba0.90gd0.10tio3 conduction mechanism dielectric ferroelectric |
| title | Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films |
| title_full | Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films |
| title_fullStr | Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films |
| title_full_unstemmed | Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films |
| title_short | Impact of Annealing Temperature on Electrical Properties of Sol-gel Ba0.90Gd0.10TiO3 Thin Films |
| title_sort | impact of annealing temperature on electrical properties of sol gel ba0 90gd0 10tio3 thin films |
| topic | annealing temperature ba0.90gd0.10tio3 conduction mechanism dielectric ferroelectric |
| url | https://matsc.ktu.lt/index.php/MatSc/article/view/32220 |
| work_keys_str_mv | AT alaeddinahmadsaif impactofannealingtemperatureonelectricalpropertiesofsolgelba090gd010tio3thinfilms AT yenchinteh impactofannealingtemperatureonelectricalpropertiesofsolgelba090gd010tio3thinfilms AT prabakaranpoopalan impactofannealingtemperatureonelectricalpropertiesofsolgelba090gd010tio3thinfilms |