High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-...
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| Format: | Article |
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MDPI AG
2021-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/5/1101 |
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| author | Muhammad Naqi Nayoung Kwon Sung Hyeon Jung Pavan Pujar Hae Won Cho Yong In Cho Hyung Koun Cho Byungkwon Lim Sunkook Kim |
| author_facet | Muhammad Naqi Nayoung Kwon Sung Hyeon Jung Pavan Pujar Hae Won Cho Yong In Cho Hyung Koun Cho Byungkwon Lim Sunkook Kim |
| author_sort | Muhammad Naqi |
| collection | DOAJ |
| description | Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔV<sub>th</sub>) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 10<sup>4</sup> s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology. |
| first_indexed | 2024-03-10T12:00:34Z |
| format | Article |
| id | doaj.art-17df2b83ac91479682d583dd3c82beff |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T12:00:34Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-17df2b83ac91479682d583dd3c82beff2023-11-21T16:58:57ZengMDPI AGNanomaterials2079-49912021-04-01115110110.3390/nano11051101High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au NanoparticlesMuhammad Naqi0Nayoung Kwon1Sung Hyeon Jung2Pavan Pujar3Hae Won Cho4Yong In Cho5Hyung Koun Cho6Byungkwon Lim7Sunkook Kim8Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaDepartment of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, KoreaNon-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔV<sub>th</sub>) of 13.7 V when it sweeps from −20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 10<sup>4</sup> s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.https://www.mdpi.com/2079-4991/11/5/1101non-volatile memory deviceflash memory devicethree-terminal memory deviceIGZOmonolayer Au nanoparticles |
| spellingShingle | Muhammad Naqi Nayoung Kwon Sung Hyeon Jung Pavan Pujar Hae Won Cho Yong In Cho Hyung Koun Cho Byungkwon Lim Sunkook Kim High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles Nanomaterials non-volatile memory device flash memory device three-terminal memory device IGZO monolayer Au nanoparticles |
| title | High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles |
| title_full | High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles |
| title_fullStr | High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles |
| title_full_unstemmed | High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles |
| title_short | High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles |
| title_sort | high performance non volatile ingazno based flash memory device embedded with a monolayer au nanoparticles |
| topic | non-volatile memory device flash memory device three-terminal memory device IGZO monolayer Au nanoparticles |
| url | https://www.mdpi.com/2079-4991/11/5/1101 |
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