High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-...
Main Authors: | Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
|
Series: | Nanomaterials |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-4991/11/5/1101 |
Similar Items
-
Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices
by: Juyeong Pyo, et al.
Published: (2023-02-01) -
Nonvolatile memory technologies with emphasis on flash : a comprehensive guide to understanding and using flash memory devices /
by: Brewer, Joe (Joe E.), et al.
Published: (2008) -
Materials and physics of emerging nonvolatile memories : symposium held April 9-13, 2012, San Francisco, California, U.S.A.
by: Materials Research Society. Meeting (2012 : San Francisco, Calif.) 543386, et al.
Published: (2012) -
Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays
by: Gerardo Malavena, et al.
Published: (2023-01-01) -
Lateral Migration‐based Flash‐like Synaptic Device for Hybrid Off‐chip/On‐chip Training
by: Min‐Kyu Park, et al.
Published: (2024-04-01)