Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process
The relationship between the purge time and the overall growth rate in pulsed injection metal–organic chemical vapor deposition with different V/III ratios is studied by numerical analysis. The transport behavior of TMAl and TMAlNH<sub>3</sub> during the process is studied to understand...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-08-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/12/8/1101 |