Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport
Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7858634/ |
| _version_ | 1818603053479100416 |
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| author | Wei Gu Xiangkai Liu Xiaodong Pi Xingliang Dai Shuangyi Zhao Li Yao Dongsheng Li Yizheng Jin Mingsheng Xu Deren Yang Guogang Qin |
| author_facet | Wei Gu Xiangkai Liu Xiaodong Pi Xingliang Dai Shuangyi Zhao Li Yao Dongsheng Li Yizheng Jin Mingsheng Xu Deren Yang Guogang Qin |
| author_sort | Wei Gu |
| collection | DOAJ |
| description | Despite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently after the use of interlayers between indium tin oxide (ITO) and poly(ethylene-dioxythiophene):polystyrene sulphonate (PEDOT:PSS) to enhance the hole transport of the devices. The interlayer of dipyrazino (2, 3-f:2 ', 3 '-h) quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) or MoO3 increases the work function of ITO and improves the band alignment, leading to better hole injection from ITO to PEDOT:PSS. The resulting mitigated charge unbalance causes both the external quantum efficiency (EQE) and stability of Si-QD LEDs to significantly increase (up to ~170% for EQE and ~240% for device half-lifetime). The highest EQE of ~2.4% obtained in the current work is among the best values that have been reported for Si-QD LEDs. Even without encapsulation, the device half-lifetime is up to ~8.5 h. The enhancement of the hole transport induced by MoO3 is more significant than that induced by HAT-CN. Therefore, MoO3 more significantly enhances the performance of Si-QD LEDs than HAT-CN. |
| first_indexed | 2024-12-16T13:17:03Z |
| format | Article |
| id | doaj.art-1827370d330c48ed8c7db721ec3e5f1d |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-16T13:17:03Z |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-1827370d330c48ed8c7db721ec3e5f1d2022-12-21T22:30:26ZengIEEEIEEE Photonics Journal1943-06552017-01-019211010.1109/JPHOT.2017.26710237858634Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole TransportWei Gu0Xiangkai Liu1Xiaodong Pi2Xingliang Dai3Shuangyi Zhao4Li Yao5Dongsheng Li6Yizheng Jin7Mingsheng Xu8Deren Yang9Guogang Qin10State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaCenter for Chemistry of High-Performance & Novel Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaCenter for Chemistry of High-Performance & Novel Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, ChinaState Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaState Key Laboratory of Silicon Materials, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang, ChinaDespite the technological importance of silicon quantum dots (Si QDs) which are solely made of abundant and nontoxic Si, Si-QD light-emitting diodes (LEDs) clearly lag behind those based on other QDs, especially Cd- or Pb-containing QDs. It is imperative that novel measures should be taken to boost the performance of Si-QD LEDs. Here, we demonstrate that Si-QD LEDs can work much more efficiently after the use of interlayers between indium tin oxide (ITO) and poly(ethylene-dioxythiophene):polystyrene sulphonate (PEDOT:PSS) to enhance the hole transport of the devices. The interlayer of dipyrazino (2, 3-f:2 ', 3 '-h) quinoxaline-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) or MoO3 increases the work function of ITO and improves the band alignment, leading to better hole injection from ITO to PEDOT:PSS. The resulting mitigated charge unbalance causes both the external quantum efficiency (EQE) and stability of Si-QD LEDs to significantly increase (up to ~170% for EQE and ~240% for device half-lifetime). The highest EQE of ~2.4% obtained in the current work is among the best values that have been reported for Si-QD LEDs. Even without encapsulation, the device half-lifetime is up to ~8.5 h. The enhancement of the hole transport induced by MoO3 is more significant than that induced by HAT-CN. Therefore, MoO3 more significantly enhances the performance of Si-QD LEDs than HAT-CN.https://ieeexplore.ieee.org/document/7858634/Silicon quantum dots (Si QDs)light-emitting diodes (LEDs)interlayerhole transport |
| spellingShingle | Wei Gu Xiangkai Liu Xiaodong Pi Xingliang Dai Shuangyi Zhao Li Yao Dongsheng Li Yizheng Jin Mingsheng Xu Deren Yang Guogang Qin Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport IEEE Photonics Journal Silicon quantum dots (Si QDs) light-emitting diodes (LEDs) interlayer hole transport |
| title | Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport |
| title_full | Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport |
| title_fullStr | Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport |
| title_full_unstemmed | Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport |
| title_short | Silicon-Quantum-Dot Light-Emitting Diodes With Interlayer-Enhanced Hole Transport |
| title_sort | silicon quantum dot light emitting diodes with interlayer enhanced hole transport |
| topic | Silicon quantum dots (Si QDs) light-emitting diodes (LEDs) interlayer hole transport |
| url | https://ieeexplore.ieee.org/document/7858634/ |
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