| Summary: | β-Ga<sub>2</sub>O<sub>3</sub> photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga<sub>2</sub>O<sub>3</sub> leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 10<sup>3</sup>) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> for high-performance MSM UV photodetectors.
|
|---|