Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity
β-Ga<sub>2</sub>O<sub>3</sub> photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (In<sub>x</sub>Ga<s...
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MDPI AG
2024-01-01
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| Online Access: | https://www.mdpi.com/1424-8220/24/3/787 |
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| author | Yupeng Zhang Ruiheng Zhou Xinyan Liu Zhengyu Bi Shengping Ruan Yan Ma Xin Li Caixia Liu Yu Chen Jingran Zhou |
| author_facet | Yupeng Zhang Ruiheng Zhou Xinyan Liu Zhengyu Bi Shengping Ruan Yan Ma Xin Li Caixia Liu Yu Chen Jingran Zhou |
| author_sort | Yupeng Zhang |
| collection | DOAJ |
| description | β-Ga<sub>2</sub>O<sub>3</sub> photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga<sub>2</sub>O<sub>3</sub> leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 10<sup>3</sup>) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> for high-performance MSM UV photodetectors. |
| first_indexed | 2024-03-08T03:49:28Z |
| format | Article |
| id | doaj.art-1829f711eb4d46c58412df81c6a1ba1b |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-08T03:49:28Z |
| publishDate | 2024-01-01 |
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| series | Sensors |
| spelling | doaj.art-1829f711eb4d46c58412df81c6a1ba1b2024-02-09T15:21:50ZengMDPI AGSensors1424-82202024-01-0124378710.3390/s24030787Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High ResponsivityYupeng Zhang0Ruiheng Zhou1Xinyan Liu2Zhengyu Bi3Shengping Ruan4Yan Ma5Xin Li6Caixia Liu7Yu Chen8Jingran Zhou9College of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, ChinaInstitute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaCollege of Electronic Science & Engineering, Jilin University, Changchun 130012, Chinaβ-Ga<sub>2</sub>O<sub>3</sub> photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga<sub>2</sub>O<sub>3</sub> leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 10<sup>3</sup>) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In<sub>0.4</sub>Ga<sub>1.6</sub>O<sub>3</sub> for high-performance MSM UV photodetectors.https://www.mdpi.com/1424-8220/24/3/787ultraviolet photodetectorhigh responsivity(In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub>oxygen vacancies |
| spellingShingle | Yupeng Zhang Ruiheng Zhou Xinyan Liu Zhengyu Bi Shengping Ruan Yan Ma Xin Li Caixia Liu Yu Chen Jingran Zhou Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity Sensors ultraviolet photodetector high responsivity (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> oxygen vacancies |
| title | Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity |
| title_full | Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity |
| title_fullStr | Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity |
| title_full_unstemmed | Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity |
| title_short | Sol-Gel Synthesized Amorphous (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for UV Photodetection with High Responsivity |
| title_sort | sol gel synthesized amorphous in sub x sub ga sub 1 x sub sub 2 sub o sub 3 sub for uv photodetection with high responsivity |
| topic | ultraviolet photodetector high responsivity (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> oxygen vacancies |
| url | https://www.mdpi.com/1424-8220/24/3/787 |
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