A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mat...
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MDPI AG
2022-09-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/15/19/6690 |
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| author | Shengnan Zhu Tianshi Liu Junchong Fan Arash Salemi Marvin H. White David Sheridan Anant K. Agarwal |
| author_facet | Shengnan Zhu Tianshi Liu Junchong Fan Arash Salemi Marvin H. White David Sheridan Anant K. Agarwal |
| author_sort | Shengnan Zhu |
| collection | DOAJ |
| description | A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">C</mi><mi>gd</mi></msub></semantics></math></inline-formula>) and reduce the specific ON-resistance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">R</mi><mrow><mi>on</mi><mo>,</mo><mi>sp</mi></mrow></msub></semantics></math></inline-formula>) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">R</mi><mrow><mi>on</mi><mo>,</mo><mi>sp</mi></mrow></msub></semantics></math></inline-formula>, 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications. |
| first_indexed | 2024-03-09T21:31:07Z |
| format | Article |
| id | doaj.art-183e109deb4c4e8cb85ebb577dd5249e |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T21:31:07Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-183e109deb4c4e8cb85ebb577dd5249e2023-11-23T20:55:06ZengMDPI AGMaterials1996-19442022-09-011519669010.3390/ma15196690A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency SwitchingShengnan Zhu0Tianshi Liu1Junchong Fan2Arash Salemi3Marvin H. White4David Sheridan5Anant K. Agarwal6Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USAAlpha and Omega Semiconductor, Sunnyvale, CA 94085, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USAAlpha and Omega Semiconductor, Sunnyvale, CA 94085, USADepartment of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USAA new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">C</mi><mi>gd</mi></msub></semantics></math></inline-formula>) and reduce the specific ON-resistance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">R</mi><mrow><mi>on</mi><mo>,</mo><mi>sp</mi></mrow></msub></semantics></math></inline-formula>) of 4H-SiC planar power MOSFETs. The Dod and the octagonal (Oct) cells are used in the layout design of the 650 V SiC MOSFETs in this work. The experimental results confirm that the Dod-cell MOSFET achieves a 2.2× lower <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mathvariant="normal">R</mi><mrow><mi>on</mi><mo>,</mo><mi>sp</mi></mrow></msub></semantics></math></inline-formula>, 2.1× smaller high-frequency figure of merit (HF-FOM), higher turn on/off dv/dt, and 29% less switching loss than the fabricated Oct-cell MOSFET. The results demonstrate that the Dod cell is an attractive candidate for high-frequency power applications.https://www.mdpi.com/1996-1944/15/19/6690SiC power MOSFETcell topologydodecagonal celloctagonal cellgate-to-drain capacitance (C<sub>gd</sub>)specific ON-resistance (R<sub>on</sub>,<sub>sp</sub>) |
| spellingShingle | Shengnan Zhu Tianshi Liu Junchong Fan Arash Salemi Marvin H. White David Sheridan Anant K. Agarwal A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching Materials SiC power MOSFET cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (C<sub>gd</sub>) specific ON-resistance (R<sub>on</sub>,<sub>sp</sub>) |
| title | A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching |
| title_full | A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching |
| title_fullStr | A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching |
| title_full_unstemmed | A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching |
| title_short | A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching |
| title_sort | new cell topology for 4h sic planar power mosfets for high frequency switching |
| topic | SiC power MOSFET cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (C<sub>gd</sub>) specific ON-resistance (R<sub>on</sub>,<sub>sp</sub>) |
| url | https://www.mdpi.com/1996-1944/15/19/6690 |
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