A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching

A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mat...

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Bibliographic Details
Main Authors:	Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal
Format:	Article
Language:	English
Published:	MDPI AG 2022-09-01
Series:	Materials
Subjects:	SiC power MOSFET cell topology dodecagonal cell octagonal cell gate-to-drain capacitance (C<sub>gd</sub>) specific ON-resistance (R<sub>on</sub>,<sub>sp</sub>)
Online Access:	https://www.mdpi.com/1996-1944/15/19/6690

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