A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching
A new cell topology named the dodecagonal (a polygon with twelve sides, short for Dod) cell is proposed to optimize the gate-to-drain capacitance (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi mat...
Main Authors: | Shengnan Zhu, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, Anant K. Agarwal |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-09-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/19/6690 |
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