Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals
In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crys...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-11-01
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Series: | Micromachines |
Subjects: | |
Online Access: | https://www.mdpi.com/2072-666X/10/11/767 |
Summary: | In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup>2</sup>. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup>2</sup> and up to 285 MHz at current densities of 2000 A/cm<sup>2</sup>. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication. |
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ISSN: | 2072-666X |