Study on Modulation Bandwidth and Light Extraction Efficiency of Flip-Chip Light-Emitting Diode with Photonic Crystals

In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crys...

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Bibliographic Details
Main Authors: Hong Wang, Ming Zhong, Lijun Tan, Wei Shi, Quanbin Zhou
Format: Article
Language:English
Published: MDPI AG 2019-11-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/10/11/767
Description
Summary:In this study, the photonic crystal structure is employed to increase both the light extraction efficiency and the modulation bandwidth of flip-chip GaN-based light-emitting diodes (LEDs). The finite difference time domain method is utilized to investigate the influence of structure of photonic crystals on the Purcell factor and light extraction efficiency of flip-chip GaN-based LEDs. Simulation results show that the modulation bandwidth is estimated to be 202 MHz at current densities of 1000 A/cm<sup>2</sup>. The experimental result of modulation bandwidth is in accord with the simulation. The optical f-3dB of the device achieves 212 MHz at current densities of 1000 A/cm<sup>2</sup> and up to 285 MHz at current densities of 2000 A/cm<sup>2</sup>. This design of photonic crystal flip-chip LED has the potential for applications in high-frequency visible light communication.
ISSN:2072-666X