Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns
Lift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simpl...
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Format: | Article |
Language: | English |
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MDPI AG
2023-03-01
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Series: | Micromachines |
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Online Access: | https://www.mdpi.com/2072-666X/14/4/766 |
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author | Hanna Ohlin Thomas Frisk Ulrich Vogt |
author_facet | Hanna Ohlin Thomas Frisk Ulrich Vogt |
author_sort | Hanna Ohlin |
collection | DOAJ |
description | Lift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simple lift-off process for dense nanostructured pattern in CSAR62. The pattern is defined in a single layer CSAR62 resist mask for gold nanostructures on silicon. The process offers a slimmed down pathway for pattern definition of dense nanostructures with varied feature size and an up to 10 nm thick gold layer. The resulting patterns from this process have been successfully used in metal assisted chemical etching applications. |
first_indexed | 2024-03-11T04:44:19Z |
format | Article |
id | doaj.art-1877f41964224fd5b0794ac7123e8fba |
institution | Directory Open Access Journal |
issn | 2072-666X |
language | English |
last_indexed | 2024-03-11T04:44:19Z |
publishDate | 2023-03-01 |
publisher | MDPI AG |
record_format | Article |
series | Micromachines |
spelling | doaj.art-1877f41964224fd5b0794ac7123e8fba2023-11-17T20:29:02ZengMDPI AGMicromachines2072-666X2023-03-0114476610.3390/mi14040766Single Layer Lift-Off of CSAR62 for Dense Nanostructured PatternsHanna Ohlin0Thomas Frisk1Ulrich Vogt2Department of Applied Physics, Biomedical and X-ray Physics, KTH Royal Institute of Technology, Albanova University Center, 106 91 Stockholm, SwedenDepartment of Applied Physics, Biomedical and X-ray Physics, KTH Royal Institute of Technology, Albanova University Center, 106 91 Stockholm, SwedenDepartment of Applied Physics, Biomedical and X-ray Physics, KTH Royal Institute of Technology, Albanova University Center, 106 91 Stockholm, SwedenLift-off processing is a common method of pattern transfer for different nanofabrication applications. With the emergence of chemically amplified and semi-amplified resist systems, the possibilities for pattern definition via electron beam lithography has been widened. We report a reliable and simple lift-off process for dense nanostructured pattern in CSAR62. The pattern is defined in a single layer CSAR62 resist mask for gold nanostructures on silicon. The process offers a slimmed down pathway for pattern definition of dense nanostructures with varied feature size and an up to 10 nm thick gold layer. The resulting patterns from this process have been successfully used in metal assisted chemical etching applications.https://www.mdpi.com/2072-666X/14/4/766lift-offsingle layerelectron beam lithographyCSAR62X-ray diffractive opticszone plate |
spellingShingle | Hanna Ohlin Thomas Frisk Ulrich Vogt Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns Micromachines lift-off single layer electron beam lithography CSAR62 X-ray diffractive optics zone plate |
title | Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns |
title_full | Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns |
title_fullStr | Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns |
title_full_unstemmed | Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns |
title_short | Single Layer Lift-Off of CSAR62 for Dense Nanostructured Patterns |
title_sort | single layer lift off of csar62 for dense nanostructured patterns |
topic | lift-off single layer electron beam lithography CSAR62 X-ray diffractive optics zone plate |
url | https://www.mdpi.com/2072-666X/14/4/766 |
work_keys_str_mv | AT hannaohlin singlelayerliftoffofcsar62fordensenanostructuredpatterns AT thomasfrisk singlelayerliftoffofcsar62fordensenanostructuredpatterns AT ulrichvogt singlelayerliftoffofcsar62fordensenanostructuredpatterns |