Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting
The conversion of solar energy into renewable H<sub>2</sub> fuel via photoelectrochemical and photocatalytic water splitting approaches has attracted considerable attention due to its potential to solve significant energy and environmental issues. To achieve reasonable energy conversion...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-04-01
|
Series: | Catalysts |
Subjects: | |
Online Access: | https://www.mdpi.com/2073-4344/13/4/728 |
_version_ | 1797605973900132352 |
---|---|
author | Hefeng Zhang Jiaqi Liu Ting Xu Wenqian Ji Xu Zong |
author_facet | Hefeng Zhang Jiaqi Liu Ting Xu Wenqian Ji Xu Zong |
author_sort | Hefeng Zhang |
collection | DOAJ |
description | The conversion of solar energy into renewable H<sub>2</sub> fuel via photoelectrochemical and photocatalytic water splitting approaches has attracted considerable attention due to its potential to solve significant energy and environmental issues. To achieve reasonable energy conversion efficiency of 10%, which is amenable to the economic feasibility of this technology, semiconductor materials, which are the main carrier for solar H<sub>2</sub> production, must fulfill several important criteria. One of the most important criteria is the band gap of the semiconductor material, which should be low enough to allow the efficient absorption of incident light. This is because the band gap of semiconductor material fundamentally determines the upper limit of the theoretical energy conversion efficiency of the solar conversion system. In this work, recent advances in utilizing semiconductor material with a band gap smaller than 2.1 eV instead of the simply-defined visible-light-responsive semiconductor materials toward solar H<sub>2</sub> production from water splitting was reviewed. |
first_indexed | 2024-03-11T05:08:44Z |
format | Article |
id | doaj.art-18886a5ba0194b5f9f16defae48f3ac5 |
institution | Directory Open Access Journal |
issn | 2073-4344 |
language | English |
last_indexed | 2024-03-11T05:08:44Z |
publishDate | 2023-04-01 |
publisher | MDPI AG |
record_format | Article |
series | Catalysts |
spelling | doaj.art-18886a5ba0194b5f9f16defae48f3ac52023-11-17T18:41:44ZengMDPI AGCatalysts2073-43442023-04-0113472810.3390/catal13040728Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water SplittingHefeng Zhang0Jiaqi Liu1Ting Xu2Wenqian Ji3Xu Zong4Marine Engineering College, Dalian Maritime University, Linghai Road 1, Dalian 116026, ChinaMarine Engineering College, Dalian Maritime University, Linghai Road 1, Dalian 116026, ChinaMarine Engineering College, Dalian Maritime University, Linghai Road 1, Dalian 116026, ChinaMarine Engineering College, Dalian Maritime University, Linghai Road 1, Dalian 116026, ChinaMarine Engineering College, Dalian Maritime University, Linghai Road 1, Dalian 116026, ChinaThe conversion of solar energy into renewable H<sub>2</sub> fuel via photoelectrochemical and photocatalytic water splitting approaches has attracted considerable attention due to its potential to solve significant energy and environmental issues. To achieve reasonable energy conversion efficiency of 10%, which is amenable to the economic feasibility of this technology, semiconductor materials, which are the main carrier for solar H<sub>2</sub> production, must fulfill several important criteria. One of the most important criteria is the band gap of the semiconductor material, which should be low enough to allow the efficient absorption of incident light. This is because the band gap of semiconductor material fundamentally determines the upper limit of the theoretical energy conversion efficiency of the solar conversion system. In this work, recent advances in utilizing semiconductor material with a band gap smaller than 2.1 eV instead of the simply-defined visible-light-responsive semiconductor materials toward solar H<sub>2</sub> production from water splitting was reviewed.https://www.mdpi.com/2073-4344/13/4/728solar energysemiconductorband gaphydrogenwater splitting |
spellingShingle | Hefeng Zhang Jiaqi Liu Ting Xu Wenqian Ji Xu Zong Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting Catalysts solar energy semiconductor band gap hydrogen water splitting |
title | Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting |
title_full | Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting |
title_fullStr | Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting |
title_full_unstemmed | Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting |
title_short | Recent Advances on Small Band Gap Semiconductor Materials (≤2.1 eV) for Solar Water Splitting |
title_sort | recent advances on small band gap semiconductor materials ≤2 1 ev for solar water splitting |
topic | solar energy semiconductor band gap hydrogen water splitting |
url | https://www.mdpi.com/2073-4344/13/4/728 |
work_keys_str_mv | AT hefengzhang recentadvancesonsmallbandgapsemiconductormaterials21evforsolarwatersplitting AT jiaqiliu recentadvancesonsmallbandgapsemiconductormaterials21evforsolarwatersplitting AT tingxu recentadvancesonsmallbandgapsemiconductormaterials21evforsolarwatersplitting AT wenqianji recentadvancesonsmallbandgapsemiconductormaterials21evforsolarwatersplitting AT xuzong recentadvancesonsmallbandgapsemiconductormaterials21evforsolarwatersplitting |