Research of shot noise based on realistic nano-MOSFETs

Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and exp...

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Main Authors: Xiaofei Jia, Liang He
Format: Article
Language:English
Published: AIP Publishing LLC 2017-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4979885
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author Xiaofei Jia
Liang He
author_facet Xiaofei Jia
Liang He
author_sort Xiaofei Jia
collection DOAJ
description Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.
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spelling doaj.art-1894ff4e815d4dcbb09f5363469468e92022-12-21T18:52:49ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055202055202-710.1063/1.4979885003704ADVResearch of shot noise based on realistic nano-MOSFETsXiaofei Jia0Liang He1School of Electronic and Information Engineering, Ankang University, AnKang 725000, People’s Republic of ChinaAdvanced Materials and Nano Technology School, Xidian University, Xi’an 710071, ChinaExperimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.http://dx.doi.org/10.1063/1.4979885
spellingShingle Xiaofei Jia
Liang He
Research of shot noise based on realistic nano-MOSFETs
AIP Advances
title Research of shot noise based on realistic nano-MOSFETs
title_full Research of shot noise based on realistic nano-MOSFETs
title_fullStr Research of shot noise based on realistic nano-MOSFETs
title_full_unstemmed Research of shot noise based on realistic nano-MOSFETs
title_short Research of shot noise based on realistic nano-MOSFETs
title_sort research of shot noise based on realistic nano mosfets
url http://dx.doi.org/10.1063/1.4979885
work_keys_str_mv AT xiaofeijia researchofshotnoisebasedonrealisticnanomosfets
AT lianghe researchofshotnoisebasedonrealisticnanomosfets