Research of shot noise based on realistic nano-MOSFETs
Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and exp...
Main Authors: | , |
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Format: | Article |
Language: | English |
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AIP Publishing LLC
2017-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4979885 |
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author | Xiaofei Jia Liang He |
author_facet | Xiaofei Jia Liang He |
author_sort | Xiaofei Jia |
collection | DOAJ |
description | Experimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET. |
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format | Article |
id | doaj.art-1894ff4e815d4dcbb09f5363469468e9 |
institution | Directory Open Access Journal |
issn | 2158-3226 |
language | English |
last_indexed | 2024-12-21T19:26:06Z |
publishDate | 2017-05-01 |
publisher | AIP Publishing LLC |
record_format | Article |
series | AIP Advances |
spelling | doaj.art-1894ff4e815d4dcbb09f5363469468e92022-12-21T18:52:49ZengAIP Publishing LLCAIP Advances2158-32262017-05-0175055202055202-710.1063/1.4979885003704ADVResearch of shot noise based on realistic nano-MOSFETsXiaofei Jia0Liang He1School of Electronic and Information Engineering, Ankang University, AnKang 725000, People’s Republic of ChinaAdvanced Materials and Nano Technology School, Xidian University, Xi’an 710071, ChinaExperimental measurements and simulation results have shown that the dominant noise source of current noise changes from thermal noise to shot noise with scaling of MOSFET, and shot noise were suppressed by Fermi and Coulomb interactions. In this paper, Shot noise test system is established, and experimental results proved that shot noise were suppressed, and the expressions of shot noise in realistic nano-MOSFETs are derived with considering Fermi effect, Coulomb interaction and the combination of the both co-existence, respectively. On this basis, the variation of shot noise with voltage, temperature and source-drain doping were researched. The results we obtained are consistent with those from experiments and the theoretically explanation is given. At the same time, the shot noise test system is suitable for traditional nanoscale electronic components; the shot noise model is suitable for nanoscale MOSFET.http://dx.doi.org/10.1063/1.4979885 |
spellingShingle | Xiaofei Jia Liang He Research of shot noise based on realistic nano-MOSFETs AIP Advances |
title | Research of shot noise based on realistic nano-MOSFETs |
title_full | Research of shot noise based on realistic nano-MOSFETs |
title_fullStr | Research of shot noise based on realistic nano-MOSFETs |
title_full_unstemmed | Research of shot noise based on realistic nano-MOSFETs |
title_short | Research of shot noise based on realistic nano-MOSFETs |
title_sort | research of shot noise based on realistic nano mosfets |
url | http://dx.doi.org/10.1063/1.4979885 |
work_keys_str_mv | AT xiaofeijia researchofshotnoisebasedonrealisticnanomosfets AT lianghe researchofshotnoisebasedonrealisticnanomosfets |