Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface
Abstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2023-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-023-38548-9 |
| _version_ | 1797822715580645376 |
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| author | Xuexi Yan Yixiao Jiang Qianqian Jin Tingting Yao Weizhen Wang Ang Tao Chunyang Gao Xiang Li Chunlin Chen Hengqiang Ye Xiu-Liang Ma |
| author_facet | Xuexi Yan Yixiao Jiang Qianqian Jin Tingting Yao Weizhen Wang Ang Tao Chunyang Gao Xiang Li Chunlin Chen Hengqiang Ye Xiu-Liang Ma |
| author_sort | Xuexi Yan |
| collection | DOAJ |
| description | Abstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices. |
| first_indexed | 2024-03-13T10:13:14Z |
| format | Article |
| id | doaj.art-18bc65e17df544b18d0d399e9543a3d0 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-13T10:13:14Z |
| publishDate | 2023-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-18bc65e17df544b18d0d399e9543a3d02023-05-21T11:20:57ZengNature PortfolioNature Communications2041-17232023-05-011411710.1038/s41467-023-38548-9Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interfaceXuexi Yan0Yixiao Jiang1Qianqian Jin2Tingting Yao3Weizhen Wang4Ang Tao5Chunyang Gao6Xiang Li7Chunlin Chen8Hengqiang Ye9Xiu-Liang Ma10Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaCenter for the Structure of Advanced Matter, School of Electronic Engineering, Guangxi University of Science and TechnologyShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaJi Hua LaboratoryShenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, School of Material Science and Engineering, University of Science and Technology of ChinaAbstract Incoherent interfaces with large mismatches usually exhibit very weak interfacial interactions so that they rarely generate intriguing interfacial properties. Here we demonstrate unexpected strong interfacial interactions at the incoherent AlN/Al2O3 (0001) interface with a large mismatch by combining transmission electron microscopy, first-principles calculations, and cathodoluminescence spectroscopy. It is revealed that strong interfacial interactions have significantly tailored the interfacial atomic structure and electronic properties. Misfit dislocation networks and stacking faults are formed at this interface, which is rarely observed at other incoherent interfaces. The band gap of the interface reduces significantly to ~ 3.9 eV due to the competition between the elongated Al-N and Al-O bonds across the interface. Thus this incoherent interface can generate a very strong interfacial ultraviolet light emission. Our findings suggest that incoherent interfaces can exhibit strong interfacial interactions and unique interfacial properties, thereby opening an avenue for the development of related heterojunction materials and devices.https://doi.org/10.1038/s41467-023-38548-9 |
| spellingShingle | Xuexi Yan Yixiao Jiang Qianqian Jin Tingting Yao Weizhen Wang Ang Tao Chunyang Gao Xiang Li Chunlin Chen Hengqiang Ye Xiu-Liang Ma Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface Nature Communications |
| title | Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| title_full | Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| title_fullStr | Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| title_full_unstemmed | Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| title_short | Interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| title_sort | interfacial interaction and intense interfacial ultraviolet light emission at an incoherent interface |
| url | https://doi.org/10.1038/s41467-023-38548-9 |
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