Pore Structures for High-Throughput Nanopore Devices
Nanopore devices are expected to advance the next-generation of nanobiodevices because of their strong sensing and analyzing capabilities for single molecules and bioparticles. However, the device throughputs are not sufficiently high. Although analytes pass through a nanopore by electrophoresis, th...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/11/10/893 |
| _version_ | 1797552463979479040 |
|---|---|
| author | Sou Ryuzaki Rintaro Matsuda Masateru Taniguchi |
| author_facet | Sou Ryuzaki Rintaro Matsuda Masateru Taniguchi |
| author_sort | Sou Ryuzaki |
| collection | DOAJ |
| description | Nanopore devices are expected to advance the next-generation of nanobiodevices because of their strong sensing and analyzing capabilities for single molecules and bioparticles. However, the device throughputs are not sufficiently high. Although analytes pass through a nanopore by electrophoresis, the electric field gradient is localized inside and around a nanopore structure. Thus, analytes located far from a nanopore cannot be driven by electrophoresis. Here, we report nanopore structures for high-throughput sensing, namely, inverted pyramid (IP)-shaped nanopore structures. Silicon-based IP-shaped nanopore structures create a homogeneous electric field gradient within a nanopore device, indicating that most of the analytes can pass through a nanopore by electrophoresis, even though the analytes are suspended far from the nanopore entrance. In addition, the nanostructures can be fabricated only by photolithography. The present study suggests a high potential for inverted pyramid shapes to serve as nanopore devices for high-throughput sensing. |
| first_indexed | 2024-03-10T16:01:27Z |
| format | Article |
| id | doaj.art-18de0b3f75d14d9595c732e802afa78a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T16:01:27Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-18de0b3f75d14d9595c732e802afa78a2023-11-20T15:14:00ZengMDPI AGMicromachines2072-666X2020-09-01111089310.3390/mi11100893Pore Structures for High-Throughput Nanopore DevicesSou Ryuzaki0Rintaro Matsuda1Masateru Taniguchi2Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 819-0395, JapanInstitute for Materials Chemistry and Engineering, Kyushu University, Fukuoka 819-0395, JapanThe Institute of Scientific and Industrial Research, Osaka University, Osaka 567-0047, JapanNanopore devices are expected to advance the next-generation of nanobiodevices because of their strong sensing and analyzing capabilities for single molecules and bioparticles. However, the device throughputs are not sufficiently high. Although analytes pass through a nanopore by electrophoresis, the electric field gradient is localized inside and around a nanopore structure. Thus, analytes located far from a nanopore cannot be driven by electrophoresis. Here, we report nanopore structures for high-throughput sensing, namely, inverted pyramid (IP)-shaped nanopore structures. Silicon-based IP-shaped nanopore structures create a homogeneous electric field gradient within a nanopore device, indicating that most of the analytes can pass through a nanopore by electrophoresis, even though the analytes are suspended far from the nanopore entrance. In addition, the nanostructures can be fabricated only by photolithography. The present study suggests a high potential for inverted pyramid shapes to serve as nanopore devices for high-throughput sensing.https://www.mdpi.com/2072-666X/11/10/893nanoporehigh-throughputelectric fieldnanofluidics |
| spellingShingle | Sou Ryuzaki Rintaro Matsuda Masateru Taniguchi Pore Structures for High-Throughput Nanopore Devices Micromachines nanopore high-throughput electric field nanofluidics |
| title | Pore Structures for High-Throughput Nanopore Devices |
| title_full | Pore Structures for High-Throughput Nanopore Devices |
| title_fullStr | Pore Structures for High-Throughput Nanopore Devices |
| title_full_unstemmed | Pore Structures for High-Throughput Nanopore Devices |
| title_short | Pore Structures for High-Throughput Nanopore Devices |
| title_sort | pore structures for high throughput nanopore devices |
| topic | nanopore high-throughput electric field nanofluidics |
| url | https://www.mdpi.com/2072-666X/11/10/893 |
| work_keys_str_mv | AT souryuzaki porestructuresforhighthroughputnanoporedevices AT rintaromatsuda porestructuresforhighthroughputnanoporedevices AT masaterutaniguchi porestructuresforhighthroughputnanoporedevices |