Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004)
Compressively strained Ge _1-x Sn _x films (x = 0.04, 0.08, 0.14) have been grown on Ge(004) substrates by Molecular Beam Epitaxy. The wavelength dependence of the refractive index is deduced as ${\rm{n}}({\rm{x}},\lambda )={{\rm{n}}}_{{\rm{Ge}}}(\lambda )+( \mbox{-} 2+3.5\lambda )x+5(1 \mbox{-} \la...
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| Format: | Article |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ab7a63 |
| _version_ | 1797746449075666944 |
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| author | Ping Tao Wenchao Tang Yan Wang Jianxin Shi Henry H Cheng Xiaoshan Wu |
| author_facet | Ping Tao Wenchao Tang Yan Wang Jianxin Shi Henry H Cheng Xiaoshan Wu |
| author_sort | Ping Tao |
| collection | DOAJ |
| description | Compressively strained Ge _1-x Sn _x films (x = 0.04, 0.08, 0.14) have been grown on Ge(004) substrates by Molecular Beam Epitaxy. The wavelength dependence of the refractive index is deduced as ${\rm{n}}({\rm{x}},\lambda )={{\rm{n}}}_{{\rm{Ge}}}(\lambda )+( \mbox{-} 2+3.5\lambda )x+5(1 \mbox{-} \lambda ){x}^{2}$ in the near-infrared range (NIR) (800–1700 nm) for Ge _1-x Sn _x alloy films. That is similar to Si _1-x Ge _x alloy films. The Hall measurement shows that the donor levels decrease due to dislocation at room temperature. Temperature dependence of the electron mobility for Ge _1-x Sn _x films reveals that strain-induced defects lower the carrier mobility from 10 K to 310 K. The maximum carrier mobility reaches 2082 cm ^2 /V·s at T = 122 K for Ge _0.96 Sn _0.04 /Ge film. These results indicate that Sn-doping has great influences on electronic properties for Ge _1-x Sn _x alloys. Our investigations may be helpful for fabricating the high performance optoelectronic devices. |
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| format | Article |
| id | doaj.art-18ec72c75c244f0c8c9c1bb3e261a9d8 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:37:00Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-18ec72c75c244f0c8c9c1bb3e261a9d82023-08-09T16:08:40ZengIOP PublishingMaterials Research Express2053-15912020-01-017303590210.1088/2053-1591/ab7a63Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004)Ping Tao0https://orcid.org/0000-0001-5006-3921Wenchao Tang1Yan Wang2Jianxin Shi3Henry H Cheng4Xiaoshan Wu5Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, People’s Republic of China; Zi Jin College, Nanjing University of Science and Technology , Nanjing 210046, People’s Republic of ChinaLaboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, People’s Republic of ChinaLaboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, People’s Republic of ChinaZi Jin College, Nanjing University of Science and Technology , Nanjing 210046, People’s Republic of ChinaNational Taiwan University , Ctr Condensed Matter Sci, Taipei 10617, TaiwanLaboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, People’s Republic of ChinaCompressively strained Ge _1-x Sn _x films (x = 0.04, 0.08, 0.14) have been grown on Ge(004) substrates by Molecular Beam Epitaxy. The wavelength dependence of the refractive index is deduced as ${\rm{n}}({\rm{x}},\lambda )={{\rm{n}}}_{{\rm{Ge}}}(\lambda )+( \mbox{-} 2+3.5\lambda )x+5(1 \mbox{-} \lambda ){x}^{2}$ in the near-infrared range (NIR) (800–1700 nm) for Ge _1-x Sn _x alloy films. That is similar to Si _1-x Ge _x alloy films. The Hall measurement shows that the donor levels decrease due to dislocation at room temperature. Temperature dependence of the electron mobility for Ge _1-x Sn _x films reveals that strain-induced defects lower the carrier mobility from 10 K to 310 K. The maximum carrier mobility reaches 2082 cm ^2 /V·s at T = 122 K for Ge _0.96 Sn _0.04 /Ge film. These results indicate that Sn-doping has great influences on electronic properties for Ge _1-x Sn _x alloys. Our investigations may be helpful for fabricating the high performance optoelectronic devices.https://doi.org/10.1088/2053-1591/ab7a63Ge1−xSnx alloy filmsstructurespectroscopic ellipsometerhall measurement |
| spellingShingle | Ping Tao Wenchao Tang Yan Wang Jianxin Shi Henry H Cheng Xiaoshan Wu Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) Materials Research Express Ge1−xSnx alloy films structure spectroscopic ellipsometer hall measurement |
| title | Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) |
| title_full | Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) |
| title_fullStr | Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) |
| title_full_unstemmed | Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) |
| title_short | Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004) |
| title_sort | optoelectronic properties for the compressively strained ge1 xsnx films grown on ge 004 |
| topic | Ge1−xSnx alloy films structure spectroscopic ellipsometer hall measurement |
| url | https://doi.org/10.1088/2053-1591/ab7a63 |
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