Optoelectronic properties for the compressively strained Ge1−xSnx films grown on Ge(004)
Compressively strained Ge _1-x Sn _x films (x = 0.04, 0.08, 0.14) have been grown on Ge(004) substrates by Molecular Beam Epitaxy. The wavelength dependence of the refractive index is deduced as ${\rm{n}}({\rm{x}},\lambda )={{\rm{n}}}_{{\rm{Ge}}}(\lambda )+( \mbox{-} 2+3.5\lambda )x+5(1 \mbox{-} \la...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab7a63 |