Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance.
This study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 by nitrogen, the surface state (Nss) increases ther...
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| Language: | English |
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Public Library of Science (PLoS)
2024-01-01
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| Series: | PLoS ONE |
| Online Access: | https://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0297825&type=printable |
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| author | Gowtham Polumati Chandra Sekhar Reddy Kolli Andres de Luna Bugallo Parikshit Sahatiya |
| author_facet | Gowtham Polumati Chandra Sekhar Reddy Kolli Andres de Luna Bugallo Parikshit Sahatiya |
| author_sort | Gowtham Polumati |
| collection | DOAJ |
| description | This study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 by nitrogen, the surface state (Nss) increases thereby increasing responsivity. The mathematical model included in the paper supports the relation of photocurrent gain and its dependency on trap level which states that the increasing the trap density increases the photocurrent gain and the same is observed experimentally. The experimental results at room temperature revealed that nitrogen doped MoS2 have a high NSS of 1.63 X 1013 states/m2/eV compared to undoped MoS2 of 4.2 x 1012 states/m2/eV. The increase in Nss in turn is the cause for rise in trap states which eventually increases the value of photo responsivity from 65.12 A/W (undoped MoS2) to 606.3 A/W (nitrogen doped MoS2). The response time calculated for undoped MoS2 was 0.85 sec and for doped MoS2 was 0.35 sec. Finally, to verify the dependence of surface states on the responsivity, the surface states were varied by varying temperature and it was observed that upon increment in temperature, the surface states decreases which causes the responsivity values also to decrease. |
| first_indexed | 2024-04-24T09:57:21Z |
| format | Article |
| id | doaj.art-18ef1b0adf1741fe81b64cb5923deed2 |
| institution | Directory Open Access Journal |
| issn | 1932-6203 |
| language | English |
| last_indexed | 2024-04-24T09:57:21Z |
| publishDate | 2024-01-01 |
| publisher | Public Library of Science (PLoS) |
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| series | PLoS ONE |
| spelling | doaj.art-18ef1b0adf1741fe81b64cb5923deed22024-04-14T05:31:27ZengPublic Library of Science (PLoS)PLoS ONE1932-62032024-01-01194e029782510.1371/journal.pone.0297825Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance.Gowtham PolumatiChandra Sekhar Reddy KolliAndres de Luna BugalloParikshit SahatiyaThis study demonstrates the effect of nitrogen doping on the surface state densities (Nss) of monolayer MoS2 and its effect on the responsivity and the response time of the photodetector. Our experimental results shows that by doping monolayer MoS2 by nitrogen, the surface state (Nss) increases thereby increasing responsivity. The mathematical model included in the paper supports the relation of photocurrent gain and its dependency on trap level which states that the increasing the trap density increases the photocurrent gain and the same is observed experimentally. The experimental results at room temperature revealed that nitrogen doped MoS2 have a high NSS of 1.63 X 1013 states/m2/eV compared to undoped MoS2 of 4.2 x 1012 states/m2/eV. The increase in Nss in turn is the cause for rise in trap states which eventually increases the value of photo responsivity from 65.12 A/W (undoped MoS2) to 606.3 A/W (nitrogen doped MoS2). The response time calculated for undoped MoS2 was 0.85 sec and for doped MoS2 was 0.35 sec. Finally, to verify the dependence of surface states on the responsivity, the surface states were varied by varying temperature and it was observed that upon increment in temperature, the surface states decreases which causes the responsivity values also to decrease.https://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0297825&type=printable |
| spellingShingle | Gowtham Polumati Chandra Sekhar Reddy Kolli Andres de Luna Bugallo Parikshit Sahatiya Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. PLoS ONE |
| title | Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. |
| title_full | Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. |
| title_fullStr | Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. |
| title_full_unstemmed | Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. |
| title_short | Engineering surface state density of monolayer CVD grown 2D MoS2 for enhanced photodetector performance. |
| title_sort | engineering surface state density of monolayer cvd grown 2d mos2 for enhanced photodetector performance |
| url | https://journals.plos.org/plosone/article/file?id=10.1371/journal.pone.0297825&type=printable |
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