PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING
InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100), Si (111), and glass. The substrate temperature Ts was varied (300-500 oC) in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray res...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Universidad Nacional de Colombia
2014-01-01
|
| Series: | Momento |
| Subjects: | |
| Online Access: | https://revistas.unal.edu.co/index.php/momento/article/view/48030 |
| _version_ | 1818980050338316288 |
|---|---|
| author | Roberto Bernal Correa Carlos M. Velásquez Máximo López López Álvaro Pulzara Mora |
| author_facet | Roberto Bernal Correa Carlos M. Velásquez Máximo López López Álvaro Pulzara Mora |
| author_sort | Roberto Bernal Correa |
| collection | DOAJ |
| description | InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100), Si (111), and glass. The substrate temperature Ts was varied (300-500 oC) in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy) attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates ~ 0.5 mm and ~ 50 nm of different geometries. |
| first_indexed | 2024-12-20T17:09:16Z |
| format | Article |
| id | doaj.art-19384cc7220e459ba4e95b7cd8eab5ae |
| institution | Directory Open Access Journal |
| issn | 0121-4470 2500-8013 |
| language | English |
| last_indexed | 2024-12-20T17:09:16Z |
| publishDate | 2014-01-01 |
| publisher | Universidad Nacional de Colombia |
| record_format | Article |
| series | Momento |
| spelling | doaj.art-19384cc7220e459ba4e95b7cd8eab5ae2022-12-21T19:32:11ZengUniversidad Nacional de ColombiaMomento0121-44702500-80132014-01-01048344638675PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERINGRoberto Bernal Correa0Carlos M. Velásquez1Máximo López López2Álvaro Pulzara Mora3Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, sede Manizales. A.A. 127, Colombia. Escuela de Materiales, Universidad Nacional de Colombia, sede Medellín, Colombia.Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, sede Manizales. A.A. 127, Colombia.Grupo de Estado Sólido, Departamento de Física, Centro de Investigación y de Estudios Avanzados del I.P.N. Av. Instituto Politécnico Nacional No. 2508, A.P. 14-740, 07000, México D.F, México.Laboratorio de Nanoestructuras Semiconductoras, Universidad Nacional de Colombia, sede Manizales. A.A. 127, Colombia.InN layers were prepared by magnetron sputtering, in a mixed atmosphere of argon and nitrogen on Si substrates (100), Si (111), and glass. The substrate temperature Ts was varied (300-500 oC) in order to correlate it with the optical, structural, and morphological properties of the layers. X-ray results have revealed a presence of hexagonal InN type wurtzite in each of the layers in addition to oxides of indium (InxOy) attributed to different factors. Dependence was evident on the crystalline quality of each layer according to Ts. The optical absorption coefficient and the band gap were determined from the absorbance and transmittance spectra obtained by UV/Vis. Vibration modes associated with the semiconductor InN and InxOy were identified by Raman microscopy. The morphology of the layers and the grain size was analyzed from SEM micrographs where it was determined the formation of particulates ~ 0.5 mm and ~ 50 nm of different geometries.https://revistas.unal.edu.co/index.php/momento/article/view/48030Nitruro de IndioMagnetrón sputteringEspectroscopía Raman |
| spellingShingle | Roberto Bernal Correa Carlos M. Velásquez Máximo López López Álvaro Pulzara Mora PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING Momento Nitruro de Indio Magnetrón sputtering Espectroscopía Raman |
| title | PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING |
| title_full | PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING |
| title_fullStr | PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING |
| title_full_unstemmed | PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING |
| title_short | PHYSICAL PROPERTIES OF InN PARTICLES OBTAINED BY RF MAGNETRON SPUTTERING |
| title_sort | physical properties of inn particles obtained by rf magnetron sputtering |
| topic | Nitruro de Indio Magnetrón sputtering Espectroscopía Raman |
| url | https://revistas.unal.edu.co/index.php/momento/article/view/48030 |
| work_keys_str_mv | AT robertobernalcorrea physicalpropertiesofinnparticlesobtainedbyrfmagnetronsputtering AT carlosmvelasquez physicalpropertiesofinnparticlesobtainedbyrfmagnetronsputtering AT maximolopezlopez physicalpropertiesofinnparticlesobtainedbyrfmagnetronsputtering AT alvaropulzaramora physicalpropertiesofinnparticlesobtainedbyrfmagnetronsputtering |