Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics
Nanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature <i>T<sub>c</s...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/2/466 |
| _version_ | 1797396831830802432 |
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| author | Michael I. Faley Yuchen Liu Rafal E. Dunin-Borkowski |
| author_facet | Michael I. Faley Yuchen Liu Rafal E. Dunin-Borkowski |
| author_sort | Michael I. Faley |
| collection | DOAJ |
| description | Nanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature <i>T<sub>c</sub></i> of up to 5.3 K and a coherence length <i>ξ</i>(4.2 K) of ~105 nm. They were deposited using pulsed DC magnetron sputtering from a stoichiometric TiN target onto Si (100) substrates that were heated to 800 °C. Electron beam lithography and highly selective reactive ion etching were used to fabricate nanoSQUIDs with 20-nm-wide nanobridge Josephson junctions of variable thickness. X-ray and high-resolution electron microscopy studies were performed. Non-hysteretic <i>I</i>(<i>V</i>) characteristics of the nanobridges and nanoSQUIDs, as well as peak-to-peak modulations of up to 17 µV in the <i>V</i>(<i>B</i>) characteristics of the nanoSQUIDs, were measured at 4.2 K. The technology offers prospects for superconducting electronics based on nanobridge Josephson junctions operating within the framework of the Ginzburg–Landau theory at 4.2 K. |
| first_indexed | 2024-03-09T00:57:19Z |
| format | Article |
| id | doaj.art-195d456590ef4bc99212b6579ce5b30c |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T00:57:19Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-195d456590ef4bc99212b6579ce5b30c2023-12-11T16:49:12ZengMDPI AGNanomaterials2079-49912021-02-0111246610.3390/nano11020466Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge ElectronicsMichael I. Faley0Yuchen Liu1Rafal E. Dunin-Borkowski2Peter Grünberg Institute 5, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyPeter Grünberg Institute 5, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyPeter Grünberg Institute 5, Forschungszentrum Jülich GmbH, 52425 Jülich, GermanyNanobridge Josephson junctions and nanometer-scale superconducting quantum interference devices (nanoSQUIDs) based on titanium nitride (TiN) thin films are described. The TiN films have a room temperature resistivity of ~15 µΩ·cm, a superconducting transition temperature <i>T<sub>c</sub></i> of up to 5.3 K and a coherence length <i>ξ</i>(4.2 K) of ~105 nm. They were deposited using pulsed DC magnetron sputtering from a stoichiometric TiN target onto Si (100) substrates that were heated to 800 °C. Electron beam lithography and highly selective reactive ion etching were used to fabricate nanoSQUIDs with 20-nm-wide nanobridge Josephson junctions of variable thickness. X-ray and high-resolution electron microscopy studies were performed. Non-hysteretic <i>I</i>(<i>V</i>) characteristics of the nanobridges and nanoSQUIDs, as well as peak-to-peak modulations of up to 17 µV in the <i>V</i>(<i>B</i>) characteristics of the nanoSQUIDs, were measured at 4.2 K. The technology offers prospects for superconducting electronics based on nanobridge Josephson junctions operating within the framework of the Ginzburg–Landau theory at 4.2 K.https://www.mdpi.com/2079-4991/11/2/466titanium nitridenanobridge Josephson junctionnanoSQUIDsuperconducting electronics |
| spellingShingle | Michael I. Faley Yuchen Liu Rafal E. Dunin-Borkowski Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics Nanomaterials titanium nitride nanobridge Josephson junction nanoSQUID superconducting electronics |
| title | Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics |
| title_full | Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics |
| title_fullStr | Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics |
| title_full_unstemmed | Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics |
| title_short | Titanium Nitride as a New Prospective Material for NanoSQUIDs and Superconducting Nanobridge Electronics |
| title_sort | titanium nitride as a new prospective material for nanosquids and superconducting nanobridge electronics |
| topic | titanium nitride nanobridge Josephson junction nanoSQUID superconducting electronics |
| url | https://www.mdpi.com/2079-4991/11/2/466 |
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