Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells

Rapid improvement in efficiency and stabilities of perovskite solar cells (PSCs) is an indication of its prime role for future energy demands. Various research has been carried out to improve efficiency including reducing the exciton recombination and enhancement of electron mobilities within cells...

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Main Authors: Muhammad Adnan, Muhammad Usman, Saqib Ali, Sofia Javed, Mohammad Islam, Muhammad Aftab Akram
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-01-01
Series:Frontiers in Chemistry
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2021.795291/full
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author Muhammad Adnan
Muhammad Usman
Muhammad Usman
Saqib Ali
Sofia Javed
Mohammad Islam
Muhammad Aftab Akram
author_facet Muhammad Adnan
Muhammad Usman
Muhammad Usman
Saqib Ali
Sofia Javed
Mohammad Islam
Muhammad Aftab Akram
author_sort Muhammad Adnan
collection DOAJ
description Rapid improvement in efficiency and stabilities of perovskite solar cells (PSCs) is an indication of its prime role for future energy demands. Various research has been carried out to improve efficiency including reducing the exciton recombination and enhancement of electron mobilities within cells by using electron transport material (ETM). In the present research, electrical, optical, and depletion width reduction properties of low temperature processed ZnO electron transport layer-based perovskite solar cells are studied. The ZnO thin films vary with the concentration of Al doping, and improvement of optical transmission percentage up to 80% for doped samples is confirmed by optical analysis. Reduction in electrical resistance for 1% Al concentration and maximum conductivity 11,697.41 (1/Ω-cm) among the prepared samples and carrier concentration 1.06×1022 cm−3 were corroborated by Hall effect measurements. Systematic impedance spectroscopy of perovskite devices with synthesized ETM is presented in the study, while the depletion width reduction is observed by Mott Schottky curves. IV measurements of the device and the interfacial charge transfer between the absorber layer of methylammonium lead iodide and ETM have also been elaborated on interface electronic characteristics.
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spelling doaj.art-1999bd28606f48db9a8cd5ae9784acab2022-12-22T04:04:20ZengFrontiers Media S.A.Frontiers in Chemistry2296-26462022-01-01910.3389/fchem.2021.795291795291Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar CellsMuhammad Adnan0Muhammad Usman1Muhammad Usman2Saqib Ali3Sofia Javed4Mohammad Islam5Muhammad Aftab Akram6Department of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, PakistanDepartment of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, PakistanDepartment of Materials Science and Engineering, College of Engineering, Peking University, Beijing, ChinaDepartment of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, PakistanDepartment of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, PakistanNew Mexico Institute of Mining and Technology, Socorro, NM, United StatesDepartment of Materials Engineering, School of Chemical and Materials Engineering, National University of Sciences and Technology, Islamabad, PakistanRapid improvement in efficiency and stabilities of perovskite solar cells (PSCs) is an indication of its prime role for future energy demands. Various research has been carried out to improve efficiency including reducing the exciton recombination and enhancement of electron mobilities within cells by using electron transport material (ETM). In the present research, electrical, optical, and depletion width reduction properties of low temperature processed ZnO electron transport layer-based perovskite solar cells are studied. The ZnO thin films vary with the concentration of Al doping, and improvement of optical transmission percentage up to 80% for doped samples is confirmed by optical analysis. Reduction in electrical resistance for 1% Al concentration and maximum conductivity 11,697.41 (1/Ω-cm) among the prepared samples and carrier concentration 1.06×1022 cm−3 were corroborated by Hall effect measurements. Systematic impedance spectroscopy of perovskite devices with synthesized ETM is presented in the study, while the depletion width reduction is observed by Mott Schottky curves. IV measurements of the device and the interfacial charge transfer between the absorber layer of methylammonium lead iodide and ETM have also been elaborated on interface electronic characteristics.https://www.frontiersin.org/articles/10.3389/fchem.2021.795291/fullZnO thin filmslow temperatureMott Schottky analysisperovskite solar cellscharge transportcharge recombination
spellingShingle Muhammad Adnan
Muhammad Usman
Muhammad Usman
Saqib Ali
Sofia Javed
Mohammad Islam
Muhammad Aftab Akram
Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
Frontiers in Chemistry
ZnO thin films
low temperature
Mott Schottky analysis
perovskite solar cells
charge transport
charge recombination
title Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
title_full Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
title_fullStr Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
title_full_unstemmed Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
title_short Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells
title_sort aluminum doping effects on interface depletion width of low temperature processed zno electron transport layer based perovskite solar cells
topic ZnO thin films
low temperature
Mott Schottky analysis
perovskite solar cells
charge transport
charge recombination
url https://www.frontiersin.org/articles/10.3389/fchem.2021.795291/full
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