Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain
The spatially continuous control of the physical properties in semiconductor materials is an important strategy in increasing electron-capturing or light-harvesting efficiencies, which is highly desirable for the application of optoelectronic devices including photodetectors, solar cells and biosens...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab7d09 |
| _version_ | 1797746449301110784 |
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| author | Yang Guo Yuan Huang Shuo Du Chi Sun Shibing Tian Hailan Luo Baoli Liu Xingjiang Zhou Junjie Li Changzhi Gu |
| author_facet | Yang Guo Yuan Huang Shuo Du Chi Sun Shibing Tian Hailan Luo Baoli Liu Xingjiang Zhou Junjie Li Changzhi Gu |
| author_sort | Yang Guo |
| collection | DOAJ |
| description | The spatially continuous control of the physical properties in semiconductor materials is an important strategy in increasing electron-capturing or light-harvesting efficiencies, which is highly desirable for the application of optoelectronic devices including photodetectors, solar cells and biosensors. Unlike the multi-layer growth of chemical composition modulation, local strain offers a convenient way to continuously tune the physical properties of a single semiconductor layer, and open up new possibility for band engineering within the 2D plane. Here, we demonstrate that the gradient refractive index and bandgap can be generated in atomically thin transition metal dichalcogenide flakes due to the effect of thermal strain difference. A highly resolved confocal scanning optical microscopy is used to perform a real-space light-reflection mapping of suspended atomically thin WSe _2 flakes at the low temperature of 4.2 K, in which the parabolic light-reflection profiles have been observed on suspended monolayer and bilayer WSe _2 flakes. This finding is corroborated by our theoretical model which includes the effect of strain on both the refractive index and bandgap of nanostructures. The inhomogeneous local strain observed here will allow new device functionalities to be integrated within 2D layered materials, such as in-plane photodetectors and photovoltaic devices. |
| first_indexed | 2024-03-12T15:37:00Z |
| format | Article |
| id | doaj.art-19aaf7e933974ec496232d73849b10b2 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:37:00Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-19aaf7e933974ec496232d73849b10b22023-08-09T16:09:15ZengIOP PublishingMaterials Research Express2053-15912020-01-017303590410.1088/2053-1591/ab7d09Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strainYang Guo0https://orcid.org/0000-0001-8975-9387Yuan Huang1Shuo Du2Chi Sun3https://orcid.org/0000-0003-1475-6442Shibing Tian4Hailan Luo5Baoli Liu6Xingjiang Zhou7https://orcid.org/0000-0002-5261-1386Junjie Li8Changzhi Gu9https://orcid.org/0000-0002-2689-2807Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of China; Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People’s Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences , Beijing 100190, People’s Republic of ChinaThe spatially continuous control of the physical properties in semiconductor materials is an important strategy in increasing electron-capturing or light-harvesting efficiencies, which is highly desirable for the application of optoelectronic devices including photodetectors, solar cells and biosensors. Unlike the multi-layer growth of chemical composition modulation, local strain offers a convenient way to continuously tune the physical properties of a single semiconductor layer, and open up new possibility for band engineering within the 2D plane. Here, we demonstrate that the gradient refractive index and bandgap can be generated in atomically thin transition metal dichalcogenide flakes due to the effect of thermal strain difference. A highly resolved confocal scanning optical microscopy is used to perform a real-space light-reflection mapping of suspended atomically thin WSe _2 flakes at the low temperature of 4.2 K, in which the parabolic light-reflection profiles have been observed on suspended monolayer and bilayer WSe _2 flakes. This finding is corroborated by our theoretical model which includes the effect of strain on both the refractive index and bandgap of nanostructures. The inhomogeneous local strain observed here will allow new device functionalities to be integrated within 2D layered materials, such as in-plane photodetectors and photovoltaic devices.https://doi.org/10.1088/2053-1591/ab7d092D layered materialstransition metal dichalcogenideslocal strainconfocal scanning optical microscopy |
| spellingShingle | Yang Guo Yuan Huang Shuo Du Chi Sun Shibing Tian Hailan Luo Baoli Liu Xingjiang Zhou Junjie Li Changzhi Gu Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain Materials Research Express 2D layered materials transition metal dichalcogenides local strain confocal scanning optical microscopy |
| title | Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain |
| title_full | Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain |
| title_fullStr | Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain |
| title_full_unstemmed | Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain |
| title_short | Real-space light-reflection mapping of atomically thin WSe2 flakes revealing the gradient local strain |
| title_sort | real space light reflection mapping of atomically thin wse2 flakes revealing the gradient local strain |
| topic | 2D layered materials transition metal dichalcogenides local strain confocal scanning optical microscopy |
| url | https://doi.org/10.1088/2053-1591/ab7d09 |
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