Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance

This work provides an off‐chip training method for a one‐selector‐one‐resistor (1S1R) crossbar array (CBA) device with wire resistance (rcc) and nonlinear conductance (g i,j) of 1S1R devices for hardware neural network (HNN) applications. An iterative method is introduced to calculate the node volta...

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Main Authors: Jihun Kim, Hyo Cheon Woo, Sunwoo Lee, Byeol Jun Lee, Taegyun Park, Cheol Seong Hwang
Format: Article
Language:English
Published: Wiley 2022-08-01
Series:Advanced Intelligent Systems
Subjects:
Online Access:https://doi.org/10.1002/aisy.202100256
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author Jihun Kim
Hyo Cheon Woo
Sunwoo Lee
Byeol Jun Lee
Taegyun Park
Cheol Seong Hwang
author_facet Jihun Kim
Hyo Cheon Woo
Sunwoo Lee
Byeol Jun Lee
Taegyun Park
Cheol Seong Hwang
author_sort Jihun Kim
collection DOAJ
description This work provides an off‐chip training method for a one‐selector‐one‐resistor (1S1R) crossbar array (CBA) device with wire resistance (rcc) and nonlinear conductance (g i,j) of 1S1R devices for hardware neural network (HNN) applications. An iterative method is introduced to calculate the node voltages of the 1S1R CBA, which arises from the variable voltage drop through the wires with rcc and g i,j. Several mathematical approximations are introduced for fast and efficient calculation. The proposed method trains the HNN to have an inference accuracy of 85.9%, whereas the inference accuracy of HNN without the rcc consideration drops to 38.5%. The inference running time with the proposed method is 1% of the HSPICE‐based simulation for the given HNN structure. As the rcc increases, the inference accuracy declines due to the decreased device voltage from the target values. The worst voltage model is adopted to identify the design factors that affected the accuracy. A CBA with a size almost three times larger can be used for the HNN if the rcc is appropriately addressed under the given device conditions.
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spelling doaj.art-19cd9292bb9d478a902e8dc78014ba1d2022-12-22T02:35:00ZengWileyAdvanced Intelligent Systems2640-45672022-08-0148n/an/a10.1002/aisy.202100256Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire ResistanceJihun Kim0Hyo Cheon Woo1Sunwoo Lee2Byeol Jun Lee3Taegyun Park4Cheol Seong Hwang5Department of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaDepartment of Materials Science and Engineering Seoul National University, and Inter-University Semiconductor Research Center Seoul National University Gwanak-ro 1 Daehag-dong Gwanak-gu Seoul 08826 Republic of KoreaThis work provides an off‐chip training method for a one‐selector‐one‐resistor (1S1R) crossbar array (CBA) device with wire resistance (rcc) and nonlinear conductance (g i,j) of 1S1R devices for hardware neural network (HNN) applications. An iterative method is introduced to calculate the node voltages of the 1S1R CBA, which arises from the variable voltage drop through the wires with rcc and g i,j. Several mathematical approximations are introduced for fast and efficient calculation. The proposed method trains the HNN to have an inference accuracy of 85.9%, whereas the inference accuracy of HNN without the rcc consideration drops to 38.5%. The inference running time with the proposed method is 1% of the HSPICE‐based simulation for the given HNN structure. As the rcc increases, the inference accuracy declines due to the decreased device voltage from the target values. The worst voltage model is adopted to identify the design factors that affected the accuracy. A CBA with a size almost three times larger can be used for the HNN if the rcc is appropriately addressed under the given device conditions.https://doi.org/10.1002/aisy.202100256crossbar arrayIR dropneural networksone-selector-one-resistorselector
spellingShingle Jihun Kim
Hyo Cheon Woo
Sunwoo Lee
Byeol Jun Lee
Taegyun Park
Cheol Seong Hwang
Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
Advanced Intelligent Systems
crossbar array
IR drop
neural networks
one-selector-one-resistor
selector
title Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
title_full Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
title_fullStr Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
title_full_unstemmed Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
title_short Training Method for Accurate Off‐Chip Training of One‐Selector‐One‐Resistor Crossbar Array with Nonlinearity and Wire Resistance
title_sort training method for accurate off chip training of one selector one resistor crossbar array with nonlinearity and wire resistance
topic crossbar array
IR drop
neural networks
one-selector-one-resistor
selector
url https://doi.org/10.1002/aisy.202100256
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