Research on vertical GaN devices based on gradient Al components

Research on vertical GaN devices based on gradient Al components

A groove-gate power device with a linearly gradient Al composition P-type AlGaN superjunction (abbreviated as LG-SJCAVET) is proposed, which uses polarized P-type AlGaN material instead of the traditional P-type GaN buried layer, avoiding the technical bottleneck of achieving high-aspect-ratio P-typ...

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Bibliographic Details
Main Authors:	Yonghe Chen, Ye Yang, Jianghui Zhai, Yuanyuan Sun
Format:	Article
Language:	English
Published:	Frontiers Media S.A. 2023-11-01
Series:	Frontiers in Physics
Subjects:	vertical GaN-based power devices super-junction AlGaN polarization effect breakdown voltage and specific on-resistance power figure of merit
Online Access:	https://www.frontiersin.org/articles/10.3389/fphy.2023.1176519/full

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