Nano-indentation study of dislocation evolution in GaN-based laser diodes
Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 $$\overline{2}$$ 2 ¯ 3> were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} <11 $$\overline{2}$$ 2 ¯ 3>...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Springer
2024-03-01
|
| Series: | Discover Nano |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-024-03983-0 |
| _version_ | 1797266613114765312 |
|---|---|
| author | Jingjing Chen Xujun Su Guobing Wang Mutong Niu Xinran Li Ke Xu |
| author_facet | Jingjing Chen Xujun Su Guobing Wang Mutong Niu Xinran Li Ke Xu |
| author_sort | Jingjing Chen |
| collection | DOAJ |
| description | Abstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 $$\overline{2}$$ 2 ¯ 3> were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} <11 $$\overline{2}$$ 2 ¯ 3>, or {1 $$\overline{1}$$ 1 ¯ 01} <11 $$\overline{2}$$ 2 ¯ 3> pyramidal slip systems in the upper p-GaN layer. Besides, {0001} <11 $$\overline{2}$$ 2 ¯ 0> basal slip system was also activated. The AlGaN/InGaN multi-layers in device can provide mismatch stresses to prevent dislocations from slipping through. It was observed that the density of dislocations induced by the indenter significantly decreased from the upper to the lower regions of the multi-layers. The a + c dislocations on pyramidal slip planes were mostly blocked by the strained layers. |
| first_indexed | 2024-04-25T01:03:28Z |
| format | Article |
| id | doaj.art-1a016f3b82bb416cbdd1ab13ccfbaabf |
| institution | Directory Open Access Journal |
| issn | 2731-9229 |
| language | English |
| last_indexed | 2024-04-25T01:03:28Z |
| publishDate | 2024-03-01 |
| publisher | Springer |
| record_format | Article |
| series | Discover Nano |
| spelling | doaj.art-1a016f3b82bb416cbdd1ab13ccfbaabf2024-03-10T12:20:21ZengSpringerDiscover Nano2731-92292024-03-011911710.1186/s11671-024-03983-0Nano-indentation study of dislocation evolution in GaN-based laser diodesJingjing Chen0Xujun Su1Guobing Wang2Mutong Niu3Xinran Li4Ke Xu5Suzhou Institute of Nano-tech and Nano-bionics, CASSuzhou Institute of Nano-tech and Nano-bionics, CASShenyang National Laboratory for Materials Science, Jiangsu Institute of Advanced SemiconductorsSuzhou Institute of Nano-tech and Nano-bionics, CASSuzhou Institute of Nano-tech and Nano-bionics, CASSuzhou Institute of Nano-tech and Nano-bionics, CASAbstract The slip systems and motion behavior of dislocations induced by nano-indentation technique in GaN-based LDs were investigated. Dislocations with burgers vector of b = 1/3 <11 $$\overline{2}$$ 2 ¯ 3> were introduced on either {11 $$\overline{2}$$ 2 ¯ 2} <11 $$\overline{2}$$ 2 ¯ 3>, or {1 $$\overline{1}$$ 1 ¯ 01} <11 $$\overline{2}$$ 2 ¯ 3> pyramidal slip systems in the upper p-GaN layer. Besides, {0001} <11 $$\overline{2}$$ 2 ¯ 0> basal slip system was also activated. The AlGaN/InGaN multi-layers in device can provide mismatch stresses to prevent dislocations from slipping through. It was observed that the density of dislocations induced by the indenter significantly decreased from the upper to the lower regions of the multi-layers. The a + c dislocations on pyramidal slip planes were mostly blocked by the strained layers.https://doi.org/10.1186/s11671-024-03983-0GaNDislocation slip systemAlGaNInGaN |
| spellingShingle | Jingjing Chen Xujun Su Guobing Wang Mutong Niu Xinran Li Ke Xu Nano-indentation study of dislocation evolution in GaN-based laser diodes Discover Nano GaN Dislocation slip system AlGaN InGaN |
| title | Nano-indentation study of dislocation evolution in GaN-based laser diodes |
| title_full | Nano-indentation study of dislocation evolution in GaN-based laser diodes |
| title_fullStr | Nano-indentation study of dislocation evolution in GaN-based laser diodes |
| title_full_unstemmed | Nano-indentation study of dislocation evolution in GaN-based laser diodes |
| title_short | Nano-indentation study of dislocation evolution in GaN-based laser diodes |
| title_sort | nano indentation study of dislocation evolution in gan based laser diodes |
| topic | GaN Dislocation slip system AlGaN InGaN |
| url | https://doi.org/10.1186/s11671-024-03983-0 |
| work_keys_str_mv | AT jingjingchen nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes AT xujunsu nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes AT guobingwang nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes AT mutongniu nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes AT xinranli nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes AT kexu nanoindentationstudyofdislocationevolutioninganbasedlaserdiodes |