Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell
The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displaceme...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5049367 |
| _version_ | 1818422795690835968 |
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| author | M. Heini A. Aierken Z. H. Li X. F. Zhao M. Sailai X. B. Shen Y. Xu H. T. Liu Y. D. Li Q. Guo C. M. Liu |
| author_facet | M. Heini A. Aierken Z. H. Li X. F. Zhao M. Sailai X. B. Shen Y. Xu H. T. Liu Y. D. Li Q. Guo C. M. Liu |
| author_sort | M. Heini |
| collection | DOAJ |
| description | The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell. |
| first_indexed | 2024-12-14T13:31:56Z |
| format | Article |
| id | doaj.art-1a1d46f4d86741269c9e341874d4d68e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-14T13:31:56Z |
| publishDate | 2018-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-1a1d46f4d86741269c9e341874d4d68e2022-12-21T22:59:41ZengAIP Publishing LLCAIP Advances2158-32262018-10-01810105022105022-810.1063/1.5049367082810ADVChanges in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cellM. Heini0A. Aierken1Z. H. Li2X. F. Zhao3M. Sailai4X. B. Shen5Y. Xu6H. T. Liu7Y. D. Li8Q. Guo9C. M. Liu10Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaKey Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences, No. 40-1 South Beijing Road, Urumqi 830011, P. R. ChinaNational Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, No. 92 West Nangang Road, Harbin 150001, P. R. ChinaThe changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.http://dx.doi.org/10.1063/1.5049367 |
| spellingShingle | M. Heini A. Aierken Z. H. Li X. F. Zhao M. Sailai X. B. Shen Y. Xu H. T. Liu Y. D. Li Q. Guo C. M. Liu Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell AIP Advances |
| title | Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell |
| title_full | Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell |
| title_fullStr | Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell |
| title_full_unstemmed | Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell |
| title_short | Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell |
| title_sort | changes in output parameters of 1 mev electron irradiated upright metamorphic gainp gainas ge triple junction solar cell |
| url | http://dx.doi.org/10.1063/1.5049367 |
| work_keys_str_mv | AT mheini changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT aaierken changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT zhli changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT xfzhao changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT msailai changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT xbshen changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT yxu changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT htliu changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT ydli changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT qguo changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell AT cmliu changesinoutputparametersof1mevelectronirradiateduprightmetamorphicgainpgainasgetriplejunctionsolarcell |