Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors
InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs m...
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MDPI AG
2020-09-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/9/1782 |
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| author | Dapeng Wang Mamoru Furuta Shigekazu Tomai Koki Yano |
| author_facet | Dapeng Wang Mamoru Furuta Shigekazu Tomai Koki Yano |
| author_sort | Dapeng Wang |
| collection | DOAJ |
| description | InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs must be further explored. In this study, the ITZO thickness (<i>T</i><sub>ITZO</sub>) is designed to tailor the initial performance of devices, especially for the 100 nm <i>T</i><sub>ITZO</sub> TFT, producing excellent electrical properties of 44.26 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> mobility, 92 mV/dec. subthreshold swing (SS), 0.04 V hysteresis, and 3.93 × 10<sup>10</sup> ON/OFF ratio, which are superior to those of the reported ITZO TFTs. In addition, incident light coupled with tunable photon energy is introduced to monitor the leakage current of various <i>T</i><sub>ITZO</sub> devices. The OFF-current results demonstrate that under the identical photon energy, many more electrons are photo-excited for the thicker <i>T</i><sub>ITZO</sub> TFTs. NBIS-induced <i>V</i><sub>th</sub> shift and SS deterioration in all TFTs are traced and analyzed in real time. As the <i>T</i><sub>ITZO</sub> thickens to near Debye length, the degree of degradation is exacerbated. When the thickness further increases, the notorious instability caused by NBIS is effectively suppressed. This study provides an important research basis for the application of ITZO-based TFTs in future displays. |
| first_indexed | 2024-03-10T16:28:20Z |
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| language | English |
| last_indexed | 2024-03-10T16:28:20Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
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| series | Nanomaterials |
| spelling | doaj.art-1a4c944a321d4f9d971fd15e2e82b6072023-11-20T13:02:44ZengMDPI AGNanomaterials2079-49912020-09-01109178210.3390/nano10091782Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film TransistorsDapeng Wang0Mamoru Furuta1Shigekazu Tomai2Koki Yano3Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Normal University, Xian 710119, ChinaSchool of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi 782-8502, JapanAdvanced Technology Research Laboratories, Idemitsu Kosan Co. Ltd., Sodegaura, Chiba 299-0293, JapanAdvanced Technology Research Laboratories, Idemitsu Kosan Co. Ltd., Sodegaura, Chiba 299-0293, JapanInSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs must be further explored. In this study, the ITZO thickness (<i>T</i><sub>ITZO</sub>) is designed to tailor the initial performance of devices, especially for the 100 nm <i>T</i><sub>ITZO</sub> TFT, producing excellent electrical properties of 44.26 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup> mobility, 92 mV/dec. subthreshold swing (SS), 0.04 V hysteresis, and 3.93 × 10<sup>10</sup> ON/OFF ratio, which are superior to those of the reported ITZO TFTs. In addition, incident light coupled with tunable photon energy is introduced to monitor the leakage current of various <i>T</i><sub>ITZO</sub> devices. The OFF-current results demonstrate that under the identical photon energy, many more electrons are photo-excited for the thicker <i>T</i><sub>ITZO</sub> TFTs. NBIS-induced <i>V</i><sub>th</sub> shift and SS deterioration in all TFTs are traced and analyzed in real time. As the <i>T</i><sub>ITZO</sub> thickens to near Debye length, the degree of degradation is exacerbated. When the thickness further increases, the notorious instability caused by NBIS is effectively suppressed. This study provides an important research basis for the application of ITZO-based TFTs in future displays.https://www.mdpi.com/2079-4991/10/9/1782photo-excitationleakage currentNBIS-induced instabilityInSnZnO thicknessoxide TFTs |
| spellingShingle | Dapeng Wang Mamoru Furuta Shigekazu Tomai Koki Yano Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors Nanomaterials photo-excitation leakage current NBIS-induced instability InSnZnO thickness oxide TFTs |
| title | Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors |
| title_full | Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors |
| title_fullStr | Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors |
| title_full_unstemmed | Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors |
| title_short | Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors |
| title_sort | impact of photo excitation on leakage current and negative bias instability in insnzno thickness varied thin film transistors |
| topic | photo-excitation leakage current NBIS-induced instability InSnZnO thickness oxide TFTs |
| url | https://www.mdpi.com/2079-4991/10/9/1782 |
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