ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength
In this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd:YAG laser, are studied. Different mean kinetic energies of the plasma (E _k ) at fixed ion densi...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/ab6773 |
| _version_ | 1797746991206236160 |
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| author | J A Guerrero de León A Pérez-Centeno G Gómez-Rosas E Camps J S Arias-Cerón M A Santana-Aranda J G Quiñones-Galvan |
| author_facet | J A Guerrero de León A Pérez-Centeno G Gómez-Rosas E Camps J S Arias-Cerón M A Santana-Aranda J G Quiñones-Galvan |
| author_sort | J A Guerrero de León |
| collection | DOAJ |
| description | In this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd:YAG laser, are studied. Different mean kinetic energies of the plasma (E _k ) at fixed ion density (N _p ) were used as control parameters. X-ray diffraction profiles show the presence of a width (002) peak together with a peak associated with the (101) reflection. Changes in E _k affect the crystallinity of the samples. An intense PL emission in the visible range of the spectra associated with a majority intrinsic donor defects can be observed. The films showed an unusual low electrical resistivity as compared to the commonly reported values for undoped ZnO thin films. |
| first_indexed | 2024-03-12T15:44:44Z |
| format | Article |
| id | doaj.art-1a4f7f7335f54b1493dafacc0615b776 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:44:44Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-1a4f7f7335f54b1493dafacc0615b7762023-08-09T15:27:36ZengIOP PublishingMaterials Research Express2053-15912020-01-017101642310.1088/2053-1591/ab6773ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelengthJ A Guerrero de León0https://orcid.org/0000-0002-2901-3716A Pérez-Centeno1https://orcid.org/0000-0003-4309-3465G Gómez-Rosas2E Camps3J S Arias-Cerón4M A Santana-Aranda5https://orcid.org/0000-0002-6296-4425J G Quiñones-Galvan6https://orcid.org/0000-0001-7931-3955Departamento de Ingeniería Mecánica Eléctrica, Centro Universitario de Ciencias Exactas e Ingenierías , Universidad de Guadalajara, Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco, C.P. 44430, MéxicoDepartamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara , Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco, C.P. 44430, MéxicoDepartamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara , Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco, C.P. 44430, MéxicoDepartamento de Física, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, México City, CDMX 11801, MéxicoCONACYT-Departamento de Ingeniería Eléctrica, Sección de Electrónica del Estado Sólido, Centro de Investigación y de Estudios Avanzados del I.P.N, A.P. 14-740, 07360 Ciudad de México, MexicoDepartamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara , Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco, C.P. 44430, MéxicoDepartamento de Física, Centro Universitario de Ciencias Exactas e Ingenierías, Universidad de Guadalajara , Boulevard Marcelino García Barragán 1421, Guadalajara, Jalisco, C.P. 44430, MéxicoIn this work, structural, optical and electrical properties of ZnO thin films grown by laser ablation of a Zn metallic target on oxygen atmosphere using the 532 nm emission of the second harmonic of a Nd:YAG laser, are studied. Different mean kinetic energies of the plasma (E _k ) at fixed ion density (N _p ) were used as control parameters. X-ray diffraction profiles show the presence of a width (002) peak together with a peak associated with the (101) reflection. Changes in E _k affect the crystallinity of the samples. An intense PL emission in the visible range of the spectra associated with a majority intrinsic donor defects can be observed. The films showed an unusual low electrical resistivity as compared to the commonly reported values for undoped ZnO thin films.https://doi.org/10.1088/2053-1591/ab6773semiconductorsthin filmspulsed laser depositionoptical propertiesZnO |
| spellingShingle | J A Guerrero de León A Pérez-Centeno G Gómez-Rosas E Camps J S Arias-Cerón M A Santana-Aranda J G Quiñones-Galvan ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength Materials Research Express semiconductors thin films pulsed laser deposition optical properties ZnO |
| title | ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength |
| title_full | ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength |
| title_fullStr | ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength |
| title_full_unstemmed | ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength |
| title_short | ZnO thin films grown at different plasma energies by the laser ablation of metallic Zn with a 532 nm wavelength |
| title_sort | zno thin films grown at different plasma energies by the laser ablation of metallic zn with a 532 nm wavelength |
| topic | semiconductors thin films pulsed laser deposition optical properties ZnO |
| url | https://doi.org/10.1088/2053-1591/ab6773 |
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