Random Telegraph Noise in 3D NAND Flash Memories
In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon chann...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/12/6/703 |
| _version_ | 1797529880349376512 |
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| author | Alessandro S. Spinelli Gerardo Malavena Andrea L. Lacaita Christian Monzio Compagnoni |
| author_facet | Alessandro S. Spinelli Gerardo Malavena Andrea L. Lacaita Christian Monzio Compagnoni |
| author_sort | Alessandro S. Spinelli |
| collection | DOAJ |
| description | In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps. |
| first_indexed | 2024-03-10T10:21:09Z |
| format | Article |
| id | doaj.art-1a52761118bf4b49be981a8732d7517a |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T10:21:09Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-1a52761118bf4b49be981a8732d7517a2023-11-22T00:24:33ZengMDPI AGMicromachines2072-666X2021-06-0112670310.3390/mi12060703Random Telegraph Noise in 3D NAND Flash MemoriesAlessandro S. Spinelli0Gerardo Malavena1Andrea L. Lacaita2Christian Monzio Compagnoni3Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, ItalyDipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milan, ItalyIn this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon channels on current transport. Starting from that, experimental data for RTN in 3D arrays are presented and explained via theoretical and simulation models. The attention is drawn, in particular, to the changes in the RTN dependences on the array working conditions that resulted from the transition from planar to 3D architectures. Such changes are explained by considering the impact of highly-defective grain boundaries on percolative current transport in cell channels in combination with the localized nature of the RTN traps.https://www.mdpi.com/2072-666X/12/6/7033D NAND Flash memoriesrandom telegraph noiseFlash memory reliability |
| spellingShingle | Alessandro S. Spinelli Gerardo Malavena Andrea L. Lacaita Christian Monzio Compagnoni Random Telegraph Noise in 3D NAND Flash Memories Micromachines 3D NAND Flash memories random telegraph noise Flash memory reliability |
| title | Random Telegraph Noise in 3D NAND Flash Memories |
| title_full | Random Telegraph Noise in 3D NAND Flash Memories |
| title_fullStr | Random Telegraph Noise in 3D NAND Flash Memories |
| title_full_unstemmed | Random Telegraph Noise in 3D NAND Flash Memories |
| title_short | Random Telegraph Noise in 3D NAND Flash Memories |
| title_sort | random telegraph noise in 3d nand flash memories |
| topic | 3D NAND Flash memories random telegraph noise Flash memory reliability |
| url | https://www.mdpi.com/2072-666X/12/6/703 |
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