Random Telegraph Noise in 3D NAND Flash Memories

Random Telegraph Noise in 3D NAND Flash Memories

In this paper, we review the phenomenology of random telegraph noise (RTN) in 3D NAND Flash arrays. The main features of such arrays resulting from their mainstream integration scheme are first discussed, pointing out the relevant role played by the polycrystalline nature of the string silicon chann...

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Bibliographic Details
Main Authors: Alessandro S. Spinelli, Gerardo Malavena, Andrea L. Lacaita, Christian Monzio Compagnoni
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
3D NAND Flash memories
random telegraph noise
Flash memory reliability
Online Access:https://www.mdpi.com/2072-666X/12/6/703

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