Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics

Accumulated halide defects on the buried interfaces of halide perovskite layers have exacerbated undesirable nonradiative recombination in the n–i–p perovskite photovoltaics, but are challenging to be passivated—the commonly used passivation molecules at buried interfaces of perovskite layers would...

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Main Authors: Xiaofeng Huang, Yaolin Hou, Qifan Feng, Xiaoying Niu, Yazhou Zhang, Ziheng Tang, Fang Cao, Jun Yin, Jing Li, Nanfeng Zheng, Binghui Wu
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Energy & Sustainability Research
Subjects:
Online Access:https://doi.org/10.1002/aesr.202200150
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author Xiaofeng Huang
Yaolin Hou
Qifan Feng
Xiaoying Niu
Yazhou Zhang
Ziheng Tang
Fang Cao
Jun Yin
Jing Li
Nanfeng Zheng
Binghui Wu
author_facet Xiaofeng Huang
Yaolin Hou
Qifan Feng
Xiaoying Niu
Yazhou Zhang
Ziheng Tang
Fang Cao
Jun Yin
Jing Li
Nanfeng Zheng
Binghui Wu
author_sort Xiaofeng Huang
collection DOAJ
description Accumulated halide defects on the buried interfaces of halide perovskite layers have exacerbated undesirable nonradiative recombination in the n–i–p perovskite photovoltaics, but are challenging to be passivated—the commonly used passivation molecules at buried interfaces of perovskite layers would be inevitably eroded in the solution processes of perovskite deposition. Regarding the solvent incompatibility, herein, the ZnO–EA/SnO2–Cl electron transfer layers (ETLs) terminated with functional sites (i.e., ethanolamine (EA) ligands on ZnO and Cl− ions on SnO2) to spontaneously heal the buried interfaces of perovskite layers are customized. The specialties of ZnO–EA/SnO2–Cl for defect passivation are revealed: 1) formation of ZnO–EA–Pb2+ coherent interlayers at the EA‐terminated ZnO‐perovskite interfaces effectively offsets the I vacancy defects of perovskites; and 2) spontaneous halide exchange between Cl−‐terminated SnO2 and unstable I−‐terminated perovskites enables the formation of FA2Sn(ICl)6‐like coherent interlayers. Thus, the customized termination of ETLs’ surface reduces the halide‐defect‐triggered nonradiative recombination at the buried surfaces of perovskite, enabling the fabricated n–i–p planar modules (6 × 6 cm2) with power conversion efficiencies approaching 18% and elevated stability. These findings provide desirable guidelines for interfacial carrier transport between perovskites and ETLs.
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spelling doaj.art-1a660d547c4a405eb7d58d71d9bd78a42023-02-10T06:07:27ZengWiley-VCHAdvanced Energy & Sustainability Research2699-94122023-02-0142n/an/a10.1002/aesr.202200150Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite PhotovoltaicsXiaofeng Huang0Yaolin Hou1Qifan Feng2Xiaoying Niu3Yazhou Zhang4Ziheng Tang5Fang Cao6Jun Yin7Jing Li8Nanfeng Zheng9Binghui Wu10State Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaState Key Laboratory for Physical Chemistry of Solid Surfaces Collaborative Innovation Center of Chemistry for Energy Materials National & Local Joint Engineering Research Center of Preparation Technology of Nanomaterials College of Chemistry and Chemical Engineering Pen-Tung Sah Institute of Micro-Nano Science and Technology Jiujiang Research Institute Xiamen University Xiamen 361005 ChinaAccumulated halide defects on the buried interfaces of halide perovskite layers have exacerbated undesirable nonradiative recombination in the n–i–p perovskite photovoltaics, but are challenging to be passivated—the commonly used passivation molecules at buried interfaces of perovskite layers would be inevitably eroded in the solution processes of perovskite deposition. Regarding the solvent incompatibility, herein, the ZnO–EA/SnO2–Cl electron transfer layers (ETLs) terminated with functional sites (i.e., ethanolamine (EA) ligands on ZnO and Cl− ions on SnO2) to spontaneously heal the buried interfaces of perovskite layers are customized. The specialties of ZnO–EA/SnO2–Cl for defect passivation are revealed: 1) formation of ZnO–EA–Pb2+ coherent interlayers at the EA‐terminated ZnO‐perovskite interfaces effectively offsets the I vacancy defects of perovskites; and 2) spontaneous halide exchange between Cl−‐terminated SnO2 and unstable I−‐terminated perovskites enables the formation of FA2Sn(ICl)6‐like coherent interlayers. Thus, the customized termination of ETLs’ surface reduces the halide‐defect‐triggered nonradiative recombination at the buried surfaces of perovskite, enabling the fabricated n–i–p planar modules (6 × 6 cm2) with power conversion efficiencies approaching 18% and elevated stability. These findings provide desirable guidelines for interfacial carrier transport between perovskites and ETLs.https://doi.org/10.1002/aesr.202200150coherent interlayersdefect healingfunctional-site terminationsperovskite solar modules
spellingShingle Xiaofeng Huang
Yaolin Hou
Qifan Feng
Xiaoying Niu
Yazhou Zhang
Ziheng Tang
Fang Cao
Jun Yin
Jing Li
Nanfeng Zheng
Binghui Wu
Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
Advanced Energy & Sustainability Research
coherent interlayers
defect healing
functional-site terminations
perovskite solar modules
title Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
title_full Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
title_fullStr Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
title_full_unstemmed Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
title_short Spontaneously Healing Buried Interfaces in n–i–p Halide Perovskite Photovoltaics
title_sort spontaneously healing buried interfaces in n i p halide perovskite photovoltaics
topic coherent interlayers
defect healing
functional-site terminations
perovskite solar modules
url https://doi.org/10.1002/aesr.202200150
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