Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native surface oxides and impurities from the N-polar...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0100225 |