Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals
The discovery of non-magnetic extreme magnetoresistance (XMR) materials has induced great interest because the XMR phenomenon challenges our understanding of how a magnetic field can alter electron transport in semimetals. Among XMR materials, the LaSb shows XMR and field-induced exotic behaviors bu...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2016-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/18/8/082002 |
| _version_ | 1797750946793521152 |
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| author | Shanshan Sun Qi Wang Peng-Jie Guo Kai Liu Hechang Lei |
| author_facet | Shanshan Sun Qi Wang Peng-Jie Guo Kai Liu Hechang Lei |
| author_sort | Shanshan Sun |
| collection | DOAJ |
| description | The discovery of non-magnetic extreme magnetoresistance (XMR) materials has induced great interest because the XMR phenomenon challenges our understanding of how a magnetic field can alter electron transport in semimetals. Among XMR materials, the LaSb shows XMR and field-induced exotic behaviors but it seems to lack the essentials for these properties. Here, we study the magnetotransport properties and electronic structure of LaBi, isostructural to LaSb. LaBi exhibits large MR as in LaSb, which can be ascribed to the nearly compensated electron and hole with rather high mobilities. More importantly, our analysis suggests that the XMR as well as field-induced resistivity upturn and plateau observed in LaSb and LaBi can be well explained by the two-band model with the compensation situation. We present the critical conditions leading to these field-induced properties. It will contribute to the understanding of the XMR phenomenon and explore novel XMR materials. |
| first_indexed | 2024-03-12T16:40:11Z |
| format | Article |
| id | doaj.art-1ad5d0ac518944c599f8b668316fb2fc |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:40:11Z |
| publishDate | 2016-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-1ad5d0ac518944c599f8b668316fb2fc2023-08-08T14:31:27ZengIOP PublishingNew Journal of Physics1367-26302016-01-0118808200210.1088/1367-2630/18/8/082002Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetalsShanshan Sun0Qi Wang1Peng-Jie Guo2Kai Liu3Hechang Lei4Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People's Republic of ChinaDepartment of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People's Republic of ChinaDepartment of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People's Republic of ChinaDepartment of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People's Republic of ChinaDepartment of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China , Beijing 100872, People's Republic of ChinaThe discovery of non-magnetic extreme magnetoresistance (XMR) materials has induced great interest because the XMR phenomenon challenges our understanding of how a magnetic field can alter electron transport in semimetals. Among XMR materials, the LaSb shows XMR and field-induced exotic behaviors but it seems to lack the essentials for these properties. Here, we study the magnetotransport properties and electronic structure of LaBi, isostructural to LaSb. LaBi exhibits large MR as in LaSb, which can be ascribed to the nearly compensated electron and hole with rather high mobilities. More importantly, our analysis suggests that the XMR as well as field-induced resistivity upturn and plateau observed in LaSb and LaBi can be well explained by the two-band model with the compensation situation. We present the critical conditions leading to these field-induced properties. It will contribute to the understanding of the XMR phenomenon and explore novel XMR materials.https://doi.org/10.1088/1367-2630/18/8/082002field-induced resistivity upturn and plateaumagnetoresistancecompensated semimetals72.15.-v72.15.Gd71.30.+h |
| spellingShingle | Shanshan Sun Qi Wang Peng-Jie Guo Kai Liu Hechang Lei Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals New Journal of Physics field-induced resistivity upturn and plateau magnetoresistance compensated semimetals 72.15.-v 72.15.Gd 71.30.+h |
| title | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals |
| title_full | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals |
| title_fullStr | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals |
| title_full_unstemmed | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals |
| title_short | Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals |
| title_sort | large magnetoresistance in labi origin of field induced resistivity upturn and plateau in compensated semimetals |
| topic | field-induced resistivity upturn and plateau magnetoresistance compensated semimetals 72.15.-v 72.15.Gd 71.30.+h |
| url | https://doi.org/10.1088/1367-2630/18/8/082002 |
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