Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from d...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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Beilstein-Institut
2016-11-01
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| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.7.165 |
| _version_ | 1811203312354066432 |
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| author | Christoph Schreyvogel Vladimir Polyakov Sina Burk Helmut Fedder Andrej Denisenko Felipe Fávaro de Oliveira Ralf Wunderlich Jan Meijer Verena Zuerbig Jörg Wrachtrup Christoph E. Nebel |
| author_facet | Christoph Schreyvogel Vladimir Polyakov Sina Burk Helmut Fedder Andrej Denisenko Felipe Fávaro de Oliveira Ralf Wunderlich Jan Meijer Verena Zuerbig Jörg Wrachtrup Christoph E. Nebel |
| author_sort | Christoph Schreyvogel |
| collection | DOAJ |
| description | In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography. |
| first_indexed | 2024-04-12T02:53:33Z |
| format | Article |
| id | doaj.art-1adf8613292c44d39fc4d15ae5b4776c |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-04-12T02:53:33Z |
| publishDate | 2016-11-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-1adf8613292c44d39fc4d15ae5b4776c2022-12-22T03:50:53ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862016-11-01711727173510.3762/bjnano.7.1652190-4286-7-165Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctionsChristoph Schreyvogel0Vladimir Polyakov1Sina Burk2Helmut Fedder3Andrej Denisenko4Felipe Fávaro de Oliveira5Ralf Wunderlich6Jan Meijer7Verena Zuerbig8Jörg Wrachtrup9Christoph E. Nebel10Fraunhofer-Institute for Applied Solid State Physics (IAF), 79108 Freiburg, GermanyFraunhofer-Institute for Applied Solid State Physics (IAF), 79108 Freiburg, Germany3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, Germany3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, GermanyDepartment of Physics and Geoscience, University of Leipzig, 04103 Leipzig, GermanyDepartment of Physics and Geoscience, University of Leipzig, 04103 Leipzig, GermanyFraunhofer-Institute for Applied Solid State Physics (IAF), 79108 Freiburg, Germany3rd Institute of Physics, University of Stuttgart, 70569 Stuttgart, GermanyFraunhofer-Institute for Applied Solid State Physics (IAF), 79108 Freiburg, GermanyIn this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV+, NV0 and NV− on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV−) and a nuclear spin (of 15N or 13C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.https://doi.org/10.3762/bjnano.7.165active charge state controldiamondfast charge state switchingNV centretwo-dimensional Schottky diode |
| spellingShingle | Christoph Schreyvogel Vladimir Polyakov Sina Burk Helmut Fedder Andrej Denisenko Felipe Fávaro de Oliveira Ralf Wunderlich Jan Meijer Verena Zuerbig Jörg Wrachtrup Christoph E. Nebel Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions Beilstein Journal of Nanotechnology active charge state control diamond fast charge state switching NV centre two-dimensional Schottky diode |
| title | Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions |
| title_full | Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions |
| title_fullStr | Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions |
| title_full_unstemmed | Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions |
| title_short | Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions |
| title_sort | active and fast charge state switching of single nv centres in diamond by in plane al schottky junctions |
| topic | active charge state control diamond fast charge state switching NV centre two-dimensional Schottky diode |
| url | https://doi.org/10.3762/bjnano.7.165 |
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